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REN F
LOTHIAN JR
PEARTON SJ
ABERNATHY CR
WISK PW
FULLOWAN TR
TSENG B
CHU SNG
CHEN YK
YANG LW
FU ST
BROZOVICH RS
LIN HH
HENNING CL
HENRY T
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PEARTON SJ
REN F
KATZ A
LOTHIAN JR
FULLOWAN TR
TSENG B
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WITMER SB
MITTLEMAN SD
LEHY D
REN F
FULLOWAN TR
KOPF RF
ABERNATHY CR
PEARTON SJ
HUMPHREY DA
MONTGOMERY RK
SMITH PR
KRESKOVSKY JP
GRUBIN HL
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REN F
ABERNATHY CR
PEARTON SJ
LOTHIAN JR
WISK PW
FULLOWAN TR
CHEN YK
YANG LW
FU ST
BROZOVICH RS
LIN HH
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PEARTON SJ
HOBSON WS
ABERNATHY CR
REN F
FULLOWAN TR
KATZ A
PERLEY AP
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PEARTON SJ
REN F
CHU SNG
HOBSON WS
ABERNATHY CR
FULLOWAN TR
LOTHIAN JR
ELLIMAN RG
JACOBSON DC
POATE JM
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Authors:
PEARTON SJ
REN F
ABERNATHY CR
FULLOWAN TR
LOTHIAN JR
Citation: Sj. Pearton et al., GROWTH AND DRY ETCH PROCESSING OF MOMBE GAAS P-N-JUNCTIONS, Semiconductor science and technology, 6(12), 1991, pp. 1116-1119
Authors:
PEARTON SJ
ABERNATHY CR
REN F
FULLOWAN TR
Citation: Sj. Pearton et al., DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWNBY METAL ORGANIC MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 6(11), 1991, pp. 1042-1047