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Results: 1-10 |
Results: 10
FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: REN F LOTHIAN JR PEARTON SJ ABERNATHY CR WISK PW FULLOWAN TR TSENG B CHU SNG CHEN YK YANG LW FU ST BROZOVICH RS LIN HH HENNING CL HENRY T
Citation: F. Ren et al., FABRICATION OF SELF-ALIGNED GAAS ALGAAS AND GAAS/INGAP MICROWAVE-POWER HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 2916-2928
DRY PROCESSED, THROUGH-WAFER VIA HOLES FOR GAAS POWER DEVICES
Authors: PEARTON SJ REN F KATZ A LOTHIAN JR FULLOWAN TR TSENG B
Citation: Sj. Pearton et al., DRY PROCESSED, THROUGH-WAFER VIA HOLES FOR GAAS POWER DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 152-158
THE EFFECTS OF IONIZING-RADIATION ON GAAS ALGAAS AND INGAAS ALINAS HETEROJUNCTION BIPOLAR-TRANSISTORS
Authors: WITMER SB MITTLEMAN SD LEHY D REN F FULLOWAN TR KOPF RF ABERNATHY CR PEARTON SJ HUMPHREY DA MONTGOMERY RK SMITH PR KRESKOVSKY JP GRUBIN HL
Citation: Sb. Witmer et al., THE EFFECTS OF IONIZING-RADIATION ON GAAS ALGAAS AND INGAAS ALINAS HETEROJUNCTION BIPOLAR-TRANSISTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 280-291
SELF-ALIGNED INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION/
Authors: REN F ABERNATHY CR PEARTON SJ LOTHIAN JR WISK PW FULLOWAN TR CHEN YK YANG LW FU ST BROZOVICH RS LIN HH
Citation: F. Ren et al., SELF-ALIGNED INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE-POWER APPLICATION/, IEEE electron device letters, 14(7), 1993, pp. 332-334
DRY-ETCHING CHARACTERISTICS OF III-V SEMICONDUCTORS IN MICROWAVE BCL3DISCHARGES
Authors: PEARTON SJ HOBSON WS ABERNATHY CR REN F FULLOWAN TR KATZ A PERLEY AP
Citation: Sj. Pearton et al., DRY-ETCHING CHARACTERISTICS OF III-V SEMICONDUCTORS IN MICROWAVE BCL3DISCHARGES, Plasma chemistry and plasma processing, 13(2), 1993, pp. 311-332
LONG-TERM STABILITY AT 200-DEGREES-C OF IMPLANT-ISOLATED GAAS
Authors: REN F PEARTON SJ ABERNATHY CR WISK PW FULLOWAN TR LOTHIAN JR ESAGUI R
Citation: F. Ren et al., LONG-TERM STABILITY AT 200-DEGREES-C OF IMPLANT-ISOLATED GAAS, Semiconductor science and technology, 8(4), 1993, pp. 605-607
APPLICATIONS OF ION-IMPLANTATION IN III-V DEVICE TECHNOLOGY
Authors: PEARTON SJ REN F CHU SNG HOBSON WS ABERNATHY CR FULLOWAN TR LOTHIAN JR ELLIMAN RG JACOBSON DC POATE JM
Citation: Sj. Pearton et al., APPLICATIONS OF ION-IMPLANTATION IN III-V DEVICE TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 79(1-4), 1993, pp. 648-650
IMPROVED PRECISION IN A RESONANCE IONIZATION MASS-SPECTROMETER BY THEUSE OF STARK-SHIFTED SPECTRAL-LINES AS A PROBE FOR EXTRACTION FIELD
Authors: DOWNEY SW EMERSON AB FULLOWAN TR
Citation: Sw. Downey et al., IMPROVED PRECISION IN A RESONANCE IONIZATION MASS-SPECTROMETER BY THEUSE OF STARK-SHIFTED SPECTRAL-LINES AS A PROBE FOR EXTRACTION FIELD, Applied spectroscopy, 47(8), 1993, pp. 1245-1250
GROWTH AND DRY ETCH PROCESSING OF MOMBE GAAS P-N-JUNCTIONS
Authors: PEARTON SJ REN F ABERNATHY CR FULLOWAN TR LOTHIAN JR
Citation: Sj. Pearton et al., GROWTH AND DRY ETCH PROCESSING OF MOMBE GAAS P-N-JUNCTIONS, Semiconductor science and technology, 6(12), 1991, pp. 1116-1119
DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWNBY METAL ORGANIC MOLECULAR-BEAM EPITAXY
Authors: PEARTON SJ ABERNATHY CR REN F FULLOWAN TR
Citation: Sj. Pearton et al., DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWNBY METAL ORGANIC MOLECULAR-BEAM EPITAXY, Semiconductor science and technology, 6(11), 1991, pp. 1042-1047
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