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Results: 1-25/85
Authors:
FUNG S
Citation: S. Fung, CHINESE GARDENS - FORWARD, STUDIES IN THE HISTORY OF GARDENS & DESIGNED LANDSCAPES, 18(3), 1998, pp. 171-173
Authors:
FUNG S
Citation: S. Fung, THE INTERDISCIPLINARY PROSPECTS OF READING 'YUAN YE' (CHINESE GARDEN TREATISES), STUDIES IN THE HISTORY OF GARDENS & DESIGNED LANDSCAPES, 18(3), 1998, pp. 211-231
Authors:
FUNG S
Citation: S. Fung, GUIDE TO SECONDARY SOURCES ON CHINESE GARDENS, STUDIES IN THE HISTORY OF GARDENS & DESIGNED LANDSCAPES, 18(3), 1998, pp. 269-286
Authors:
LIMING W
FUNG S
BELING CD
FUCHS M
SEITSONEN AP
Citation: W. Liming et al., IDENTIFICATION OF CHARGE STATES OF INDIUM VACANCIES IN INP USING THE POSITRON-ELECTRON AUTOCORRELATION FUNCTION, Journal of physics. Condensed matter (Print), 10(41), 1998, pp. 9263-9271
Authors:
ZOU X
WEBB DP
CHAN YC
LAM YW
HU YF
FUNG S
BELING CD
Citation: X. Zou et al., PROBING OF MICROVOIDS IN HIGH-RATE DEPOSITED ALPHA-SI-H THIN-FILMS BYVARIABLE-ENERGY POSITRON-ANNIHILATION SPECTROSCOPY, Journal of materials research, 13(10), 1998, pp. 2833-2840
Authors:
DENG AH
PANDA BK
FUNG S
BELING CD
SCHRADER DM
Citation: Ah. Deng et al., POSITRON LIFETIME ANALYSIS USING THE MATRIX INVERSE LAPLACE TRANSFORMATION METHOD, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(3-4), 1998, pp. 439-448
Authors:
REDDY CV
LUO YL
FUNG S
BELING CD
Citation: Cv. Reddy et al., DX-LIKE PROPERTIES OF THE EL6 DEFECT FAMILY IN GAAS, Physical review. B, Condensed matter, 58(3), 1998, pp. 1358-1366
Authors:
REDDY CV
FUNG S
BELING CD
Citation: Cv. Reddy et al., RAPID THERMAL ANNEALING-INDUCED DEEP-LEVEL DEFECTS IN TE-DOPED GAAS, Physica status solidi. a, Applied research, 168(2), 1998, pp. 463-474
Authors:
ZOU X
WEBB DP
CHAN YC
LAM YW
HU YF
GONG M
BELING CD
FUNG S
Citation: X. Zou et al., DEPTH PROFILING OF VACANCY-TYPE DEFECTS IN HOMOGENOUS AND MULTILAYERED A-SI FILMS BY POSITRON BEAM DOPPLER BROADENING, Journal of non-crystalline solids, 230, 1998, pp. 105-110
Authors:
FUNG S
SHAN YY
DENG AH
LING CC
BELING CD
LYNN KG
Citation: S. Fung et al., STUDY OF DX CENTER IN CD0.8ZN0.2TE-CL BY POSITRON-ANNIHILATION, Journal of applied physics, 84(4), 1998, pp. 1889-1892
Authors:
FUNG S
XU XL
ZHAO YW
JIANG CX
Citation: S. Fung et al., GALLIUM ALUMINUM INTERDIFFUSION BETWEEN N-GAN AND SAPPHIRE/, Journal of applied physics, 84(4), 1998, pp. 2355-2357
Authors:
FUNG S
GONG M
BELING CD
BRAUER G
WIRTH H
SKORUPA W
Citation: S. Fung et al., ALUMINUM-IMPLANTATION-INDUCED DEEP LEVELS IN N-TYPE 6H-SIC, Journal of applied physics, 84(2), 1998, pp. 1152-1154
Authors:
CHEN TP
LI S
FUNG S
LO KF
Citation: Tp. Chen et al., INTERFACE-TRAP GENERATION BY FN INJECTION UNDER DYNAMIC OXIDE FIELD STRESS, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1920-1926
Authors:
CHEN TP
LI S
FUNG S
BELING CD
LO KF
Citation: Tp. Chen et al., POSTSTRESS INTERFACE-TRAP GENERATION INDUCED BY OXIDE-FIELD STRESS WITH FN INJECTION, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1972-1977
Authors:
GONG M
REDDY CV
BELING CD
FUNG S
BRAUER G
WIRTH H
SKORUPA W
Citation: M. Gong et al., DEEP-LEVEL TRAPS IN THE EXTENDED TAIL REGION OF BORON-IMPLANTED N-TYPE 6H-SIC, Applied physics letters, 72(21), 1998, pp. 2739-2741
Authors:
ZHAO YW
XU XL
GONG M
FUNG S
BELING CD
CHEN XD
SUN NF
SUN TN
LIU SL
YANG GY
GUO XB
SUN YZ
WANG L
ZHENG QY
ZHOU ZH
CHEN J
Citation: Yw. Zhao et al., FORMATION OF P-IN DEFECT IN ANNEALED LIQUID-ENCAPSULATED CZOCHRALSKI INP, Applied physics letters, 72(17), 1998, pp. 2126-2128
Authors:
LIMING W
PANDA BK
FUNG S
BELING CD
Citation: W. Liming et al., CALCULATION OF THE MOMENTUM DISTRIBUTIONS OF POSITRON-ANNIHILATION RADIATION IN GE, Journal of physics. Condensed matter, 9(38), 1997, pp. 8147-8154
Authors:
LAM CWH
CHUNG CY
LING CC
FUNG S
BELING CD
Citation: Cwh. Lam et al., REMOVAL OF MARTENSITE STABILIZATION IN CANTIM SHAPE-MEMORY ALLOY BY POST-QUENCH AGING, Journal of materials processing technology, 63(1-3), 1997, pp. 600-603
Authors:
GRAHAM SC
FRIEND RH
FUNG S
MORATTI SC
Citation: Sc. Graham et al., THE EFFECT OF X-RAY-IRRADIATION ON POLY(P-PHENYLENE VINYLENE) AND DERIVATIVES, Synthetic metals, 84(1-3), 1997, pp. 903-904
Authors:
LIMING W
PANDA BK
FUNG S
BELING CD
Citation: W. Liming et al., POSITRON LIFETIME IN ELEMENTAL SEMICONDUCTORS IN THE GENERALIZED GRADIENT APPROXIMATION, Physica status solidi. b, Basic research, 204(2), 1997, pp. 679-683
Authors:
DENG AH
PANDA BK
FUNG S
BELING CD
Citation: Ah. Deng et al., POSITRON LIFETIME ANALYSIS FROM GENERALIZED CONSTRAINED LEAST-SQUARESTECHNIQUE, Physica status solidi. b, Basic research, 201(2), 1997, pp. 413-416
Authors:
LEUNG WH
HUN TSM
FUNG S
WILLIAMS ID
WONG KY
Citation: Wh. Leung et al., SYNTHESES AND ELECTROCHEMISTRY OF METAL-COMPLEXES OF A BULKY PYRIDINE-THIOLATE LIGAND, Polyhedron, 16(20), 1997, pp. 3641-3648
Authors:
CHEN TP
LO KF
FUNG S
Citation: Tp. Chen et al., INSTABILITIES IN GATE-CONTROLLED-DIODE CHARACTERISTICS OF N-MOSFETS FOLLOWING HOT-CARRIER INJECTION, Semiconductor science and technology, 12(11), 1997, pp. 1365-1368
Authors:
WENG HM
HU YF
BELING CD
FUNG S
Citation: Hm. Weng et al., AN APPARATUS USED TO MAKE NA-22 SOURCES FOR USE IN LOW-ENERGY POSITRON BEAMS, Applied surface science, 116, 1997, pp. 98-103
Authors:
BELING CD
FUNG S
AU HL
LING CC
REDDY CV
DENG AH
PANDA BK
Citation: Cd. Beling et al., POSITRON DEEP-LEVEL TRANSIENT SPECTROSCOPY - A NEW APPLICATION OF POSITRON-ANNIHILATION TO SEMICONDUCTOR PHYSICS, Applied surface science, 116, 1997, pp. 121-128