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Results: 1-19 |
Results: 19
Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon
Authors: Bazzali, A Borionetti, G Falster, R Gambaro, D Mule'Stagno, L Olmo, M Orizio, R Porrini, M
Citation: A. Bazzali et al., Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon, MAT SC S PR, 4(1-3), 2001, pp. 23-26
Gate oxide integrity dependence on substrate characteristics and SiO2 thickness
Authors: Bonoli, F Godio, P Borionetti, G Falster, R
Citation: F. Bonoli et al., Gate oxide integrity dependence on substrate characteristics and SiO2 thickness, MAT SC S PR, 4(1-3), 2001, pp. 145-148
Effect of doping on point defect incorporation during silicon growth
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Effect of doping on point defect incorporation during silicon growth, MICROEL ENG, 56(1-2), 2001, pp. 165-168
Dielectric breakdown distributions for void containing silicon substrates
Authors: Falster, R Bonoli, F Voronkov, VV
Citation: R. Falster et al., Dielectric breakdown distributions for void containing silicon substrates, MICROEL REL, 41(7), 2001, pp. 967-971
Diffusion-limited growth of single- and double-octahedral voids in siliconand the effect of surface oxygen monolayer
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Diffusion-limited growth of single- and double-octahedral voids in siliconand the effect of surface oxygen monolayer, J CRYST GR, 226(2-3), 2001, pp. 192-202
Shallow thermal donors in nitrogen-doped silicon
Authors: Voronkov, VV Porrini, M Collareta, P Pretto, MG Scala, R Falster, R Voronkova, GI Batunina, AV Golovina, VN Arapkina, LV Guliaeva, AS Milvidski, MG
Citation: Vv. Voronkov et al., Shallow thermal donors in nitrogen-doped silicon, J APPL PHYS, 89(8), 2001, pp. 4289-4293
Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon, J APPL PHYS, 89(11), 2001, pp. 5965-5971
The engineering of intrinsic point defects in silicon wafers and crystals
Authors: Falster, R Voronkov, VV
Citation: R. Falster et Vv. Voronkov, The engineering of intrinsic point defects in silicon wafers and crystals, MAT SCI E B, 73(1-3), 2000, pp. 87-94
Intrinsic point defeats and their control in silicon crystal growth and wafer processing
Authors: Falster, R Voronkov, VV
Citation: R. Falster et Vv. Voronkov, Intrinsic point defeats and their control in silicon crystal growth and wafer processing, MRS BULL, 25(6), 2000, pp. 28-32
On the properties of the intrinsic point defects in silicon: A perspectivefrom crystal growth and wafer processing
Authors: Falster, R Voronkov, VV
Citation: R. Falster et Vv. Voronkov, On the properties of the intrinsic point defects in silicon: A perspectivefrom crystal growth and wafer processing, PHYS ST S-B, 222(1), 2000, pp. 219-244
Coupled-flux nucleation modeling of oxygen precipitation in silicon
Authors: Wei, PF Kelton, KF Falster, R
Citation: Pf. Wei et al., Coupled-flux nucleation modeling of oxygen precipitation in silicon, J APPL PHYS, 88(9), 2000, pp. 5062-5070
Dopant effect on point defect incorporation into growing silicon crystal
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Dopant effect on point defect incorporation into growing silicon crystal, J APPL PHYS, 87(9), 2000, pp. 4126-4129
The sensitivity of thermal donor generation in silicon to self-interstitial sinks
Authors: Voronkov, VV Voronkova, GI Batunina, AV Falster, R Golovina, VN Guliaeva, AS Tiurina, NB Milvidski, MG
Citation: Vv. Voronkov et al., The sensitivity of thermal donor generation in silicon to self-interstitial sinks, J ELCHEM SO, 147(10), 2000, pp. 3899-3906
Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon, J CRYST GR, 204(4), 1999, pp. 462-474
Nucleation and growth of faceted voids in silicon crystals
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Nucleation and growth of faceted voids in silicon crystals, J CRYST GR, 199, 1999, pp. 399-403
The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures
Authors: McQuaid, SA Johnson, BK Gambaro, D Falster, R Ashwin, MJ Tucker, JH
Citation: Sa. Mcquaid et al., The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures, J APPL PHYS, 86(4), 1999, pp. 1878-1887
Vacancy and self-interstitial concentration incorporated into growing silicon crystals
Authors: Voronkov, VV Falster, R
Citation: Vv. Voronkov et R. Falster, Vacancy and self-interstitial concentration incorporated into growing silicon crystals, J APPL PHYS, 86(11), 1999, pp. 5975-5982
Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation
Authors: Kelton, KF Falster, R Gambaro, D Olmo, M Cornara, M Wei, PF
Citation: Kf. Kelton et al., Oxygen precipitation in silicon: Experimental studies and theoretical investigations within the classical theory of nucleation, J APPL PHYS, 85(12), 1999, pp. 8097-8111
Minority carrier lifetime dependence on resistivity in high-purity p-type silicon
Authors: Geranzani, P Porrini, M Orizio, R Falster, R
Citation: P. Geranzani et al., Minority carrier lifetime dependence on resistivity in high-purity p-type silicon, J ELCHEM SO, 146(9), 1999, pp. 3494-3499
Risultati: 1-19 |