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Results:
1-8
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Results: 8
Authors:
Farahmand, M
Brennan, KF
Gebara, E
Heo, D
Suh, Y
Laskar, J
Citation: M. Farahmand et al., Theoretical study of RF-breakdown in bulk GaN and GaN MESFETs, IEEE DEVICE, 48(9), 2001, pp. 1844-1849
Authors:
Farahmand, M
Garetto, C
Bellotti, E
Brennan, KF
Goano, M
Ghillino, E
Ghione, G
Albrecht, JD
Ruden, PP
Citation: M. Farahmand et al., Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries, IEEE DEVICE, 48(3), 2001, pp. 535-542
Authors:
Farahmand, M
Brennan, KF
Citation: M. Farahmand et Kf. Brennan, Full band Monte Carlo comparison of wurtzite and zincblende phase GaN MESFETs, MRS I J N S, 5, 2000, pp. NIL_544-NIL_549
Authors:
Brennan, KF
Bellotti, E
Farahmand, M
Haralson, J
Ruden, PP
Albrecht, JD
Sutandi, A
Citation: Kf. Brennan et al., Materials theory based modeling of wide band gap semiconductors: from basic properties to devices, SOL ST ELEC, 44(2), 2000, pp. 195-204
Authors:
Farahmand, M
Brennan, KF
Citation: M. Farahmand et Kf. Brennan, Comparison between wurtzite phase and zincblende phase GaN MESFET's using a full band Monte Carlo simulation, IEEE DEVICE, 47(3), 2000, pp. 493-497
Authors:
Brennan, KF
Bellotti, E
Farahmand, M
Nilsson, HE
Ruden, PP
Zhang, YM
Citation: Kf. Brennan et al., Monte Carlo simulation of noncubic symmetry semiconducting materials and devices, IEEE DEVICE, 47(10), 2000, pp. 1882-1890
Authors:
Farahmand, M
Brennan, KF
Citation: M. Farahmand et Kf. Brennan, Full band Monte Carlo simulation of zincblende GaN MESFET's including realistic impact ionization rates, IEEE DEVICE, 46(7), 1999, pp. 1319-1325
Authors:
Soot, SJ
Eshraghi, N
Farahmand, M
Sheppard, BC
Deveney, CW
Citation: Sj. Soot et al., Transition from open to laparoscopic fundoplication - The learning curve, ARCH SURG, 134(3), 1999, pp. 278-281
Risultati:
1-8
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