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Results: 1-11 |
Results: 11
Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres
Authors: Mistele, D Fedler, F Klausing, H Rotter, T Stemmer, J Semchinova, OK Aderhold, J
Citation: D. Mistele et al., Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres, J CRYST GR, 230(3-4), 2001, pp. 564-568
Electrical properties of photoanodically generated thin oxide films on n-GaN
Authors: Rotter, T Ferretti, R Mistele, D Fedler, F Klausing, H Stemmer, J Semchinova, OK Aderhold, J Graul, J
Citation: T. Rotter et al., Electrical properties of photoanodically generated thin oxide films on n-GaN, J CRYST GR, 230(3-4), 2001, pp. 602-606
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates
Authors: Aderhold, J Davydov, VY Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Stemmer, J Graul, J
Citation: J. Aderhold et al., InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates, J CRYST GR, 222(4), 2001, pp. 701-705
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Authors: Rotter, T Mistele, D Stemmer, J Seyboth, M Schwegler, V Paprotta, S Fedler, F Klausing, H Semchinova, OK Aderhold, J Graul, J
Citation: T. Rotter et al., First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide, ELECTR LETT, 37(11), 2001, pp. 715-716
A study of the effect of V/III flux ratio and substrate temperature on theIn incorporation efficiency in InxGa1-x/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy
Authors: O'Steen, ML Fedler, F Hauenstein, RJ
Citation: Ml. O'Steen et al., A study of the effect of V/III flux ratio and substrate temperature on theIn incorporation efficiency in InxGa1-x/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy, MRS I J N S, 5, 2000, pp. NIL_149-NIL_154
Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors
Authors: Klausing, H Aderhold, J Fedler, F Mistele, D Stemmer, J Semchinova, O Graul, J Danhardt, J Panzer, S
Citation: H. Klausing et al., Electron beam pumping in nitride vertical cavities with GaN/Al0.25Ga0.75N Bragg reflectors, MRS I J N S, 5, 2000, pp. NIL_562-NIL_567
High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy
Authors: Stemmer, J Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Aderhold, J Sanchez, AM Pacheco, FJ Molina, SI Fehrer, M Hommel, D Graul, J
Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20
Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films
Authors: Emtsev, VV Davydov, VY Lundin, VV Poloskin, DS Aderhold, J Klausing, H Mistele, D Rotter, T Stemmer, J Fedler, F Semchinova, O Graul, J
Citation: Vv. Emtsev et al., Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN films, J CRYST GR, 210(1-3), 2000, pp. 273-277
Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions
Authors: Rotter, T Mistele, D Stemmer, J Fedler, F Aderhold, J Graul, J Schwegler, V Kirchner, C Kamp, M Heuken, M
Citation: T. Rotter et al., Photoinduced oxide film formation on n-type GaN surfaces using alkaline solutions, APPL PHYS L, 76(26), 2000, pp. 3923-3925
High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantumwells: Influence of Si doping concentration
Authors: Cho, YH Fedler, F Hauenstein, RJ Park, GH Song, JJ Keller, S Mishra, UK DenBaars, SP
Citation: Yh. Cho et al., High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantumwells: Influence of Si doping concentration, J APPL PHYS, 85(5), 1999, pp. 3006-3008
Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
Authors: O'Steen, ML Fedler, F Hauenstein, RJ
Citation: Ml. O'Steen et al., Effect of substrate temperature and V/III flux ratio on In incorporation for InGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, APPL PHYS L, 75(15), 1999, pp. 2280-2282
Risultati: 1-11 |