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Results:
1-8
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Results: 8
Authors:
Boucaud, P
Brunhes, T
Sauvage, S
Yam, N
Le Thanh, V
Bouchier, D
Rappaport, N
Finkman, E
Citation: P. Boucaud et al., Midinfrared photoconductivity in Ge/Si self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 233-236
Authors:
Finkman, E
Maimon, S
Immer, V
Bahir, G
Schacham, SE
Fossard, F
Julien, FH
Brault, J
Gendry, M
Citation: E. Finkman et al., Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 K - art. no. 045323, PHYS REV B, 6304(4), 2001, pp. 5323
Authors:
Finkman, E
Meyer, F
Mamor, M
Citation: E. Finkman et al., Short-range order and strain in SiGeC alloys probed by phonons, J APPL PHYS, 89(5), 2001, pp. 2580-2587
Authors:
Tisch, U
Meyler, B
Katz, O
Finkman, E
Salzman, J
Citation: U. Tisch et al., Dependence of the refractive index of AlxGa1-xN on temperature and composition at elevated temperatures, J APPL PHYS, 89(5), 2001, pp. 2676-2685
Authors:
Gusakov, Y
Finkman, E
Bahir, G
Ritter, D
Citation: Y. Gusakov et al., The effect of strain in InP/InGaAs quantum-well infrared photodetectors onthe operating wavelength, APPL PHYS L, 79(16), 2001, pp. 2508-2510
Authors:
Sauvage, S
Boucaud, P
Brunhes, T
Immer, V
Finkman, E
Gerard, JM
Citation: S. Sauvage et al., Midinfrared absorption and photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots, APPL PHYS L, 78(16), 2001, pp. 2327-2329
Authors:
Bonan, J
Meyer, F
Finkman, E
Warren, P
Boher, P
Citation: J. Bonan et al., Carbon dependence of the dielectric response function in epitaxial SiGeC layers grown on Si, THIN SOL FI, 364(1-2), 2000, pp. 53-57
Authors:
Rappaport, N
Finkman, E
Brunhes, T
Boucaud, P
Sauvage, S
Yam, N
Le Thanh, V
Bouchier, D
Citation: N. Rappaport et al., Midinfrared photoconductivity of Ge/Si self-assembled quantum dots, APPL PHYS L, 77(20), 2000, pp. 3224-3226
Risultati:
1-8
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