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Results:
1-10
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Results: 10
Authors:
Fiory, AT
Bourdelle, KK
Roy, PK
Citation: At. Fiory et al., Spike annealing of boron-implanted polycrystalline-silicon on thin SiO2, APPL PHYS L, 78(8), 2001, pp. 1071-1073
Authors:
Agarwal, A
Gossmann, HJ
Fiory, AT
Citation: A. Agarwal et al., Effect of ramp rates during rapid thermal annealing of ion implanted boronfor formation of ultra-shallow junctions, J ELEC MAT, 28(12), 1999, pp. 1333-1339
Authors:
Fiory, AT
Bourdelle, KK
Citation: At. Fiory et Kk. Bourdelle, Thermal activation of shallow boron-ion implants, J ELEC MAT, 28(12), 1999, pp. 1345-1352
Authors:
Fiory, AT
Citation: At. Fiory, Thin SiO2 films grown for brief oxidation times, J ELEC MAT, 28(12), 1999, pp. 1358-1364
Authors:
Nguyenphu, B
Fiory, AT
Citation: B. Nguyenphu et At. Fiory, Wafer temperature measurement in a rapid thermal processor with modulated lamp power, J ELEC MAT, 28(12), 1999, pp. 1376-1384
Authors:
Abedrabbo, S
Hensel, JC
Fiory, AT
Ravindra, NM
Citation: S. Abedrabbo et al., Evidence from spectral emissometry for conduction intraband transitions inthe intrinsic regime for silicon, J ELEC MAT, 28(12), 1999, pp. 1390-1393
Authors:
Pelaz, L
Venezia, VC
Gossmann, HJ
Gilmer, GH
Fiory, AT
Rafferty, CS
Jaraiz, M
Barbolla, J
Citation: L. Pelaz et al., Activation and deactivation of implanted B in Si, APPL PHYS L, 75(5), 1999, pp. 662-664
Authors:
Fiory, AT
Bourdelle, KK
Citation: At. Fiory et Kk. Bourdelle, Electrical activation kinetics for shallow boron implants in silicon, APPL PHYS L, 74(18), 1999, pp. 2658-2660
Authors:
Agarwal, A
Gossmann, HJ
Eaglesham, DJ
Herner, SB
Fiory, AT
Haynes, TE
Citation: A. Agarwal et al., Boron-enhanced diffusion of boron from ultralow-energy ion implantation, APPL PHYS L, 74(17), 1999, pp. 2435-2437
Authors:
Abedrabbo, S
Tong, FM
Ravindra, NM
Gelpey, J
Marcus, S
Fiory, AT
Citation: S. Abedrabbo et al., Wafer emissivity independent temperature measurements, J ELEC MAT, 27(12), 1998, pp. 1323-1328
Risultati:
1-10
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