Citation: A. Agarwal et al., Effect of ramp rates during rapid thermal annealing of ion implanted boronfor formation of ultra-shallow junctions, J ELEC MAT, 28(12), 1999, pp. 1333-1339
Citation: B. Nguyenphu et At. Fiory, Wafer temperature measurement in a rapid thermal processor with modulated lamp power, J ELEC MAT, 28(12), 1999, pp. 1376-1384
Authors:
Abedrabbo, S
Hensel, JC
Fiory, AT
Ravindra, NM
Citation: S. Abedrabbo et al., Evidence from spectral emissometry for conduction intraband transitions inthe intrinsic regime for silicon, J ELEC MAT, 28(12), 1999, pp. 1390-1393