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Results: 5
Development of a vertical gradient freeze process for low EPD GaAs substrates
Authors:
Bunger, T Behr, D Eichler, S Flade, T Fliegel, W Jurisch, M Kleinwechter, A Kretzer, U Steinegger, T Weinert, B
Citation:
T. Bunger et al., Development of a vertical gradient freeze process for low EPD GaAs substrates, MAT SCI E B, 80(1-3), 2001, pp. 5-9
200 mm GaAs crystal growth by the temperature gradient controlled LEC method
Authors:
Seidl, A Eichler, S Flade, T Jurisch, M Kohler, A Kretzer, U Weinert, B
Citation:
A. Seidl et al., 200 mm GaAs crystal growth by the temperature gradient controlled LEC method, J CRYST GR, 225(2-4), 2001, pp. 561-565
State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals
Authors:
Flade, T Jurisch, M Kleinwechter, A Kohler, A Kretzer, U Prause, J Reinhold, T Weinert, B
Citation:
T. Flade et al., State of the art 6 '' SI GaAs wafers made of conventionally grown LEC-crystals, J CRYST GR, 199, 1999, pp. 336-342
Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach
Authors:
Korb, J Flade, T Jurisch, M Kohler, A Reinhold, T Weinert, B
Citation:
J. Korb et al., Carbon, oxygen, boron, hydrogen and nitrogen in the LEC growth of SI GaAs:a thermochemical approach, J CRYST GR, 199, 1999, pp. 343-348
Oxygen incorporation in undoped LEC-GaAs
Authors:
Gartner, G Flade, T Jurisch, M Kohler, A Korb, J Kretzer, U Weinert, B
Citation:
G. Gartner et al., Oxygen incorporation in undoped LEC-GaAs, J CRYST GR, 199, 1999, pp. 355-360
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