AAAAAA

   
Results: 1-19 |
Results: 19
Growth of undoped ZnO films with improved electrical properties by radicalsource molecular beam epitaxy
Authors: Nakahara, K Tanabe, T Takasu, H Fons, P Iwata, K Yamada, A Matsubara, K Hunger, R Niki, S
Citation: K. Nakahara et al., Growth of undoped ZnO films with improved electrical properties by radicalsource molecular beam epitaxy, JPN J A P 1, 40(1), 2001, pp. 250-254
Photoluminescence properties of sodium incorporation in CuInSe2 and CuIn3Se5 thin films
Authors: Kimura, R Nakada, T Fons, P Yamada, A Niki, S Matsuzawa, T Takahashi, K Kunioka, A
Citation: R. Kimura et al., Photoluminescence properties of sodium incorporation in CuInSe2 and CuIn3Se5 thin films, SOL EN MAT, 67(1-4), 2001, pp. 289-295
Far-infrared optical conductivity of YBCO single crystal thin films from transmission and reflection spectra
Authors: Shibata, H Kimura, S Kashiwaya, S Ueno, S Koyanagi, M Terada, N Kawate, E Fons, P Tanaka, Y
Citation: H. Shibata et al., Far-infrared optical conductivity of YBCO single crystal thin films from transmission and reflection spectra, J PHYS CH S, 62(1-2), 2001, pp. 253-256
Nucleation and growth of ZnO on (1(1)over-bar-20) sapphire substrates using molecular beam epitaxy
Authors: Fons, P Iwata, K Yamada, A Matsubara, K Niki, S Nakahara, K Tanabe, T Takasu, H
Citation: P. Fons et al., Nucleation and growth of ZnO on (1(1)over-bar-20) sapphire substrates using molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 911-916
Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE)
Authors: Nakahara, K Takasu, H Fons, P Iwata, K Yamada, A Matsubara, K Hunger, R Niki, S
Citation: K. Nakahara et al., Growth and characterization of undoped ZnO films for single crystal based device use by radical source molecular beam epitaxy (RS-MBE), J CRYST GR, 227, 2001, pp. 923-928
Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage
Authors: Kolobov, AV Shklyaev, AA Oyanagi, H Fons, P Yamasaki, S Ichikawa, M
Citation: Av. Kolobov et al., Local structure of Ge nanoislands on Si(111) surfaces with a SiO2 coverage, APPL PHYS L, 78(17), 2001, pp. 2563-2565
Far-infrared optical conductivity of YBa2Cu3O7-x thin films
Authors: Shibata, H Kimura, S Kashiwaya, S Ueno, S Koyanagi, M Terada, N Kawate, E Fons, P Tanaka, Y
Citation: H. Shibata et al., Far-infrared optical conductivity of YBa2Cu3O7-x thin films, PHYSICA C, 341, 2000, pp. 2197-2200
Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE
Authors: Iwata, K Fons, P Niki, S Yamada, A Matsubara, K Nakahara, K Takasu, H
Citation: K. Iwata et al., Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE, PHYS ST S-A, 180(1), 2000, pp. 287-292
ZnO growth on Si by radical source MBE
Authors: Iwata, K Fons, P Niki, S Yamada, A Matsubara, K Nakahara, K Tanabe, T Takasu, H
Citation: K. Iwata et al., ZnO growth on Si by radical source MBE, J CRYST GR, 214, 2000, pp. 50-54
Nitrogen-induced defects in ZnO : N grown on sapphire substrate by gas source MBE
Authors: Iwata, K Fons, P Yamada, A Matsubara, K Niki, S
Citation: K. Iwata et al., Nitrogen-induced defects in ZnO : N grown on sapphire substrate by gas source MBE, J CRYST GR, 209(2-3), 2000, pp. 526-531
Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)alpha-Al2O3
Authors: Fons, P Iwata, K Niki, S Yamada, A Matsubara, K Watanabe, M
Citation: P. Fons et al., Uniaxial locked growth of high-quality epitaxial ZnO films on (11(2)over-bar-0)alpha-Al2O3, J CRYST GR, 209(2-3), 2000, pp. 532-536
Uniaxial locked epitaxy of ZnO on the a face of sapphire
Authors: Fons, P Iwata, K Yamada, A Matsubara, K Niki, S Nakahara, K Tanabe, T Takasu, H
Citation: P. Fons et al., Uniaxial locked epitaxy of ZnO on the a face of sapphire, APPL PHYS L, 77(12), 2000, pp. 1801-1803
Anti-angiogenic strategy in cancerology
Authors: Fons, P Malavaud, B Venat, L Plouet, J
Citation: P. Fons et al., Anti-angiogenic strategy in cancerology, B ACA N MED, 184(3), 2000, pp. 579-587
Deposition of Ge1-xCx alloy on Si by combined low-energy ion beam and molecular beam epitaxial method
Authors: Shibata, H Kimura, S Fons, P Yamada, A Obara, A Kobayashi, N
Citation: H. Shibata et al., Deposition of Ge1-xCx alloy on Si by combined low-energy ion beam and molecular beam epitaxial method, JPN J A P 1, 38(6A), 1999, pp. 3459-3465
Effects of sodium on CuIn3Se5 thin films
Authors: Kimura, R Mouri, T Nakada, T Niki, S Yamada, A Fons, P Matsuzawa, T Takahashi, K Kunioka, A
Citation: R. Kimura et al., Effects of sodium on CuIn3Se5 thin films, JPN J A P 2, 38(8B), 1999, pp. L899-L901
Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy
Authors: Matsubara, K Niki, S Watanabe, M Fons, P Iwata, K Yamada, A
Citation: K. Matsubara et al., Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy, APPL PHYS A, 69, 1999, pp. S679-S681
Epitaxial growth of ZnO thin films on LiNbO3 substrates
Authors: Matsubara, K Fons, P Yamada, A Watanabe, M Niki, S
Citation: K. Matsubara et al., Epitaxial growth of ZnO thin films on LiNbO3 substrates, THIN SOL FI, 347(1-2), 1999, pp. 238-240
Growth of high-quality epitaxial ZnO films on alpha-Al2O3
Authors: Fons, P Iwata, K Niki, S Yamada, A Matsubara, K
Citation: P. Fons et al., Growth of high-quality epitaxial ZnO films on alpha-Al2O3, J CRYST GR, 202, 1999, pp. 627-632
Direct observation of the Cu2-xSe phase of Cu-rich epitaxial CuInSe2 grownon GaAs (001)
Authors: Fons, P Niki, S Yamada, A Oyanagi, H
Citation: P. Fons et al., Direct observation of the Cu2-xSe phase of Cu-rich epitaxial CuInSe2 grownon GaAs (001), J APPL PHYS, 84(12), 1998, pp. 6926-6928
Risultati: 1-19 |