Authors: Frechengues, S Bertru, N Drouot, V Paranthoen, C Dehaese, O Loualiche, S Le Corre, A Lambert, B

Citation: S. Frechengues et al., Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (113)B InP substrates, J CRYST GR, 209(4), 2000, pp. 661-665

Authors: Lacombe, D Ponchet, A Frechengues, S Drouot, V Bertru, N Lambert, B Le Corre, A

Citation: D. Lacombe et al., Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (001) and (113)B InP at low lattice mismatch, J CRYST GR, 202, 1999, pp. 252-255

Authors: Frechengues, S Drouot, V Bertru, N Lambert, B Loualiche, S Le Corre, A

Citation: S. Frechengues et al., Self-organized InAs islands on InP(311)B substrates emitting around 1.55 mu m, J CRYST GR, 202, 1999, pp. 1180-1185

Authors: Hinooda, S Frechengues, S Lambert, B Loualiche, S Paillard, M Marie, X Amand, T

Citation: S. Hinooda et al., Carrier dynamics of self-assembled InAs quantum dots on InP (311)B substrates, APPL PHYS L, 75(22), 1999, pp. 3530-3532

Authors: Frechengues, S Bertru, N Drouot, V Lambert, B Robinet, S Loualiche, S Lacombe, D Ponchet, A

Citation: S. Frechengues et al., Wavelength tuning of InAs quantum dots grown on (311)B InP, APPL PHYS L, 74(22), 1999, pp. 3356-3358

Authors: Lacombe, D Ponchet, A Frechengues, S Drouot, V Bertru, N Lambert, B Le Corre, A

Citation: D. Lacombe et al., Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate, APPL PHYS L, 74(12), 1999, pp. 1680-1682