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Results:
1-10
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Results: 10
Authors:
Duke, MB
Ignatiev, A
Freundlich, A
Rosenberg, S
Makel, D
Citation: Mb. Duke et al., Silicon PV cell production on the moon, J AEROSP E, 14(2), 2001, pp. 77-83
Authors:
Walters, RJ
Summers, GP
Messenger, SR
Romero, MJ
Al-Jassim, MM
Garcia, R
Araujo, D
Freundlich, A
Newman, F
Vilela, MF
Citation: Rj. Walters et al., Electron beam induced current and cathodoluminescence study of proton irradiated InAsxP1-x/InP quantum-well solar cells, J APPL PHYS, 90(6), 2001, pp. 2840-2846
Authors:
Freundlich, A
Newman, F
Monier, C
Street, S
Dargan, P
Levy, M
Citation: A. Freundlich et al., High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells, PROG PHOTOV, 8(3), 2000, pp. 333-338
Authors:
Walters, RJ
Summers, GP
Messenger, SR
Freundlich, A
Monier, C
Newman, F
Citation: Rj. Walters et al., Radiation hard multi-quantum well InP/InAsP solar cells for space applications, PROG PHOTOV, 8(3), 2000, pp. 349-354
Authors:
Freundlich, A
Horton, C
Vilela, MF
Sterling, M
Ignatiev, A
Neu, G
Teisseire, M
Citation: A. Freundlich et al., Photoluminescence of GaAs grown by metallorganic molecular beam epitaxy inspace ultra-vacuum, J CRYST GR, 209(2-3), 2000, pp. 435-439
Authors:
Freundlich, A
Newman, F
Vilela, MF
Monier, C
Aguilar, L
Street, S
Citation: A. Freundlich et al., Development of GaAs space solar cells by high growth rate MOMBE/CBE, J CRYST GR, 209(2-3), 2000, pp. 481-485
Authors:
Monier, C
Serdiukova, I
Aguilar, L
Newman, F
Vilela, MF
Freundlich, A
Citation: C. Monier et al., Analysis of excitonic absorption properties and their electric field dependence in chemical beam epitaxy-grown InAsP InP multiple quantum wells, J VAC SCI B, 17(3), 1999, pp. 1158-1162
Authors:
Monier, C
Freundlich, A
Vilela, MF
Citation: C. Monier et al., Oscillator strength of excitons in (In,Ga)As/GaAs quantum wells in the presence of a large electric field, J APPL PHYS, 85(5), 1999, pp. 2713-2718
Authors:
Neu, G
Teisseire, M
Freundlich, A
Horton, C
Ignatiev, A
Citation: G. Neu et al., Donor-acceptor-pair spectroscopy of GaAs grown in space ultravacuum, APPL PHYS L, 74(22), 1999, pp. 3341-3343
Critical built-in electric field for an optimum carrier collection in multiquantum well p-i-n diodes
Authors:
Serdiukova, I
Monier, C
Vilela, MF
Freundlich, A
Citation: I. Serdiukova et al., Critical built-in electric field for an optimum carrier collection in multiquantum well p-i-n diodes, APPL PHYS L, 74(19), 1999, pp. 2812-2814
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