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Results: 1-7 |
Results: 7
Fabrication of self-aligned 90-nm fully depleted SOICMOS SLOTFETs
Authors: Chen, CK Chen, CL Gouker, PM Wyatt, PW Yost, DR Burns, JA Suntharalingam, V Fritze, M Keast, CL
Citation: Ck. Chen et al., Fabrication of self-aligned 90-nm fully depleted SOICMOS SLOTFETs, IEEE ELEC D, 22(7), 2001, pp. 345-347
Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography
Authors: Fritze, M Burns, J Wyatt, PW Chen, CK Gouker, P Chen, CL Keast, C Astolfi, D Yost, D Preble, D Curtis, A Davis, P Cann, S Deneault, S Liu, HY
Citation: M. Fritze et al., Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography, J VAC SCI B, 18(6), 2000, pp. 2886-2890
High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs
Authors: Chen, CL Mathews, RH Burns, JA Wyatt, PW Yost, DR Chen, CK Fritze, M Knecht, JM Suntharalingam, V Soares, A Keast, CL
Citation: Cl. Chen et al., High-frequency characterization of sub-0.25-mu m fully depleted silicon-on-insulator MOSFETs, IEEE ELEC D, 21(10), 2000, pp. 497-499
Chromeless phase-shift masks used for sub-100nm SOICMOS transistors
Authors: Fritze, M Astolfi, DK Yost, DRW Wyatt, PW Liu, HY Forte, T Davis, P Curtis, A Preble, D Cann, S Denault, S Shaw, J Sullivan, N Brandom, R Mastovich, M
Citation: M. Fritze et al., Chromeless phase-shift masks used for sub-100nm SOICMOS transistors, SOL ST TECH, 43(7), 2000, pp. 116
Prescribed burning as a soil amelioration measure
Authors: Malkonen, E Levula, T Fritze, M
Citation: E. Malkonen et al., Prescribed burning as a soil amelioration measure, FOR SCI, 65, 2000, pp. 296-300
Nanofabrication with deep-ultraviolet lithography and resolution enhancements
Authors: Fritze, M Palmateer, S Maki, P Knecht, J Chen, CK Astolfi, D Cann, S Denault, S Krohn, K Wyatt, PW
Citation: M. Fritze et al., Nanofabrication with deep-ultraviolet lithography and resolution enhancements, J VAC SCI B, 17(6), 1999, pp. 3310-3313
Sub-100 nm KrF lithography for complementary metal-oxide-semiconductor circuits
Authors: Fritze, M Astolfi, D Liu, H Chen, CK Suntharalingam, V Preble, D Wyatt, PW
Citation: M. Fritze et al., Sub-100 nm KrF lithography for complementary metal-oxide-semiconductor circuits, J VAC SCI B, 17(2), 1999, pp. 345-349
Risultati: 1-7 |