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Results: 1-12 |
Results: 12
Vacancy formation energy of silicon determined by a new quenching method
Authors: Fukata, N Kasuya, A Suezawa, M
Citation: N. Fukata et al., Vacancy formation energy of silicon determined by a new quenching method, JPN J A P 2, 40(8B), 2001, pp. L854-L856
Optical absorption spectra of Be-H and Zn-H complexes in Si
Authors: Mori, R Fukata, N Suezawa, M Kasuya, A
Citation: R. Mori et al., Optical absorption spectra of Be-H and Zn-H complexes in Si, PHYSICA B, 302, 2001, pp. 206-211
C-s-H-2 defect in crystalline silicon
Authors: Markevich, VP Murin, LI Hermansson, J Kleverman, M Lindstrom, JL Fukata, N Suezawa, M
Citation: Vp. Markevich et al., C-s-H-2 defect in crystalline silicon, PHYSICA B, 302, 2001, pp. 220-226
Temperature dependence of vibrational spectra of H-point defect complexes and H-2 in Si - art. no. 085205
Authors: Suezawa, M Fukata, N Takahashi, T Saito, M Yamada-Kaneta, H
Citation: M. Suezawa et al., Temperature dependence of vibrational spectra of H-point defect complexes and H-2 in Si - art. no. 085205, PHYS REV B, 6408(8), 2001, pp. 5205
Formation and annihilation of H-point defect complexes in quenched Si doped with C
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Formation and annihilation of H-point defect complexes in quenched Si doped with C, J APPL PHYS, 88(8), 2000, pp. 4525-4530
Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere, J APPL PHYS, 87(12), 2000, pp. 8361-8367
Three different forms of hydrogen molecules in silicon
Authors: Kitajima, M Ishioka, K Nakanoya, K Tateishi, S Mori, T Fukata, N Murakami, K Hishita, S
Citation: M. Kitajima et al., Three different forms of hydrogen molecules in silicon, JPN J A P 2, 38(7A), 1999, pp. L691-L693
Effects of crystal disorder on the molecular hydrogen formation in silicon
Authors: Kitajima, M Ishioka, K Tateishi, S Nakanoya, K Fukata, N Murakami, K Fujimura, S Hishita, S Komatsu, M Haneda, H
Citation: M. Kitajima et al., Effects of crystal disorder on the molecular hydrogen formation in silicon, MAT SCI E B, 58(1-2), 1999, pp. 13-16
Optical absorption due to H-point defect complexes in quenched Si doped with C
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Optical absorption due to H-point defect complexes in quenched Si doped with C, PHYSICA B, 274, 1999, pp. 247-250
Hydrogen molecules trapped by multivacancies in silicon
Authors: Ishioka, K Kitajima, M Tateishi, S Nakanoya, K Fukata, N Mori, T Murakami, K Hishita, S
Citation: K. Ishioka et al., Hydrogen molecules trapped by multivacancies in silicon, PHYS REV B, 60(15), 1999, pp. 10852-10854
Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials
Authors: Fukata, N Suezawa, M
Citation: N. Fukata et M. Suezawa, Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials, J APPL PHYS, 86(4), 1999, pp. 1848-1853
Optical absorption lines due to H-2-related defects in Si
Authors: Takahashi, H Fukata, N Suezawa, M Yamada-Kaneta, H
Citation: H. Takahashi et al., Optical absorption lines due to H-2-related defects in Si, PHYS ST S-B, 210(2), 1998, pp. 581-586
Risultati: 1-12 |