Authors:
BERTHELOT L
TARDY J
GAGNAIRE A
JOSEPH J
MASENELLI B
GARRIGUES M
TRAN VH
RIGNEAULT H
Citation: L. Berthelot et al., MODIFIED SPONTANEOUS EMISSION IN OLIGO(P-PHENYLENE VINYLENE) PLANAR MICROCAVITIES, Optical materials, 9(1-4), 1998, pp. 25-33
Citation: S. Callard et al., CHARACTERIZATION OF GRADED REFRACTIVE-INDEX SILICON OXYNITRIDE THIN-FILMS BY SPECTROSCOPIC ELLIPSOMETRY, Thin solid films, 313, 1998, pp. 384-388
Citation: S. Callard et al., FABRICATION AND CHARACTERIZATION OF GRADED REFRACTIVE-INDEX SILICON OXYNITRIDE THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2088-2094
Authors:
MARTINET C
PAILLARD V
GAGNAIRE A
JOSEPH J
Citation: C. Martinet et al., DEPOSITION OF SIO2 AND TIO2 THIN-FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FOR ANTIREFLECTION COATING, Journal of non-crystalline solids, 216, 1997, pp. 77-82
Authors:
LAMBRINOS MF
BESLAND MP
GAGNAIRE A
LOUIS P
CALLARD S
JOSEPH J
Citation: Mf. Lambrinos et al., IN-SITU PHOTOLUMINESCENCE CONTROL DURING FABRICATION OF SIO2 INP STRUCTURES/, Journal of the Electrochemical Society, 144(6), 1997, pp. 2086-2095
Authors:
SAOUDI R
HOLLINGER G
GAGNAIRE A
PITAVAL M
MOLLE P
Citation: R. Saoudi et al., PHYSICOCHEMICAL AND STRUCTURAL STUDY OF V ERY THIN SILICON-NITRIDE AND OXYNITRIDE FORMED BY RAPID THERMAL-TREATMENT, Journal de physique. III, 5(5), 1995, pp. 557-573
Citation: N. Gonon et al., GROWTH AND STRUCTURE OF RAPID THERMAL SILICON-OXIDES AND NITROXIDES STUDIED BY SPECTROELLIPSOMETRY AND AUGER-ELECTRON SPECTROSCOPY, Journal of applied physics, 76(9), 1994, pp. 5242-5248
Authors:
SAOUDI R
HOLLINGER G
GAGNAIRE A
FERRET P
PITAVAL M
Citation: R. Saoudi et al., VERY THIN SILICON DIOXIDE FILM THICKNESS DETERMINATION USING TRANSMISSION ELECTRON-MICROSCOPY, SPECTROSCOPIC ELLIPSOMETRY AND X-RAY PHOTOELECTRON-SPECTROSCOPY, Journal de physique. III, 3(7), 1993, pp. 1479-1488