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Results: 1-7 |
Results: 7
SILICIDES AND OHMIC CONTACTS
Authors: GAMBINO JP COLGAN EG
Citation: Jp. Gambino et Eg. Colgan, SILICIDES AND OHMIC CONTACTS, Materials chemistry and physics, 52(2), 1998, pp. 99-146
THE THERMAL-STABILITY OF COSI2 ON POLYCRYSTALLINE SILICON - THE EFFECT OF SILICON GRAIN-SIZE AND METAL THICKNESS
Authors: GAMBINO JP COLGAN EG DOMENICUCCI AG CUNNINGHAM B
Citation: Jp. Gambino et al., THE THERMAL-STABILITY OF COSI2 ON POLYCRYSTALLINE SILICON - THE EFFECT OF SILICON GRAIN-SIZE AND METAL THICKNESS, Journal of the Electrochemical Society, 145(4), 1998, pp. 1384-1389
REACTION OF TI WITH WSI2
Authors: GAMBINO JP CUNNINGHAM B DEHAVEN P ADAMS ED
Citation: Jp. Gambino et al., REACTION OF TI WITH WSI2, Journal of applied physics, 82(12), 1997, pp. 6073-6077
FORMATION AND STABILITY OF SILICIDES ON POLYCRYSTALLINE SILICON
Authors: COLGAN EG GAMBINO JP HONG QZ
Citation: Eg. Colgan et al., FORMATION AND STABILITY OF SILICIDES ON POLYCRYSTALLINE SILICON, Materials science & engineering. R, Reports, 16(2), 1996, pp. 43-96
NICKEL SILICIDE THERMAL-STABILITY ON POLYCRYSTALLINE AND SINGLE-CRYSTALLINE SILICON
Authors: COLGAN EG GAMBINO JP CUNNINGHAM B
Citation: Eg. Colgan et al., NICKEL SILICIDE THERMAL-STABILITY ON POLYCRYSTALLINE AND SINGLE-CRYSTALLINE SILICON, Materials chemistry and physics, 46(2-3), 1996, pp. 209-214
JUNCTION LEAKAGE DUE TO COSI2 FORMATION ON AS-DOPED POLYSILICON
Authors: GAMBINO JP CUNNINGHAM B
Citation: Jp. Gambino et B. Cunningham, JUNCTION LEAKAGE DUE TO COSI2 FORMATION ON AS-DOPED POLYSILICON, Journal of the Electrochemical Society, 140(9), 1993, pp. 2654-2658
FABRICATION OF TUNGSTEN LOCAL INTERCONNECT FOR VLSI BIPOLAR TECHNOLOGY
Authors: KOBEDA E MAZZEO NJ GAMBINO JP NG H PATTON GL WARNOCK JD BASAVAIAH S WHITE JF CRESSLER JD
Citation: E. Kobeda et al., FABRICATION OF TUNGSTEN LOCAL INTERCONNECT FOR VLSI BIPOLAR TECHNOLOGY, Journal of the Electrochemical Society, 140(10), 1993, pp. 3007-3013
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