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Results: 4

Authors: BELL LD SMITH RP MCDERMOTT BT GERTNER ER PITTMAN R PIERSON RL SULLIVAN GJ
Citation: Ld. Bell et al., METAL GAN SCHOTTKY BARRIERS CHARACTERIZED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2286-2290

Authors: BELL LD SMITH RP MCDERMOTT BT GERTNER ER PITTMAN R PIERSON RL SULLIVAN GJ
Citation: Ld. Bell et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY AND SPECTROSCOPY OF METAL GAN INTERFACES/, Applied physics letters, 72(13), 1998, pp. 1590-1592

Authors: MCDERMOTT BT GERTNER ER PITTMAN S SEABURY CW CHANG MF
Citation: Bt. Mcdermott et al., GROWTH AND DOPING OF GAASSB VIA METALORGANIC CHEMICAL-VAPOR-DEPOSITION FOR INP HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 68(10), 1996, pp. 1386-1388

Authors: BUBULAC LO EDWALL DD IRVINE SJC GERTNER ER SHIN SH
Citation: Lo. Bubulac et al., P-TYPE DOPING OF DOUBLE-LAYER MERCURY CADMIUM TELLURIDE FOR JUNCTION FORMATION, Journal of electronic materials, 24(5), 1995, pp. 617-624
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