Authors: GHODSI R SHARIFZADEH S MAJJIGA J

Citation: R. Ghodsi et al., GATE-INDUCED DRAIN-LEAKAGE IN BURIED-CHANNEL PMOS - A LIMITING FACTORIN DEVELOPMENT OF LOW-COST, HIGH-PERFORMANCE 3.3-V, 0.25-MU-M TECHNOLOGY, IEEE electron device letters, 19(9), 1998, pp. 354-356

Authors: CHIANG CYT HSU CTC YEOW YT GHODSI R

Citation: Cyt. Chiang et al., MEASUREMENT OF MOSFET SUBSTRATE DOPANT PROFILE VIA INVERSION LAYER-TO-SUBSTRATE CAPACITANCE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1732-1736

Authors: GHODSI R YEOW YT

Citation: R. Ghodsi et Yt. Yeow, SMALL-SIGNAL GATE-TO-DRAIN CAPACITANCE OF MOSFET AS A DIAGNOSTIC-TOOLFOR HOT-CARRIER-INDUCED DEGRADATION, Microelectronics and reliability, 37(7), 1997, pp. 1021-1028

Authors: GHODSI R YEOW YT LING CH ALAM MK

Citation: R. Ghodsi et al., ARRIVING AT A UNIFIED MODEL FOR HOT-CARRIER DEGRADATION IN MOSFETS THROUGH GATE-TO-DRAIN CAPACITANCE MEASUREMENT, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2423-2429

Authors: GHODSI R YEOW YT ALAM MK

Citation: R. Ghodsi et al., ASSESSMENT OF HOT-HOLE-INDUCED INTERFACE STATES AND TRAPPED CARRIERS IN SUBMICRON-N (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS) BYGATE-TO-DRAIN CAPACITANCE MEASUREMENT, Applied physics letters, 65(9), 1994, pp. 1139-1141