Authors: GILES MD YU SF KENNEL HW PACKAN PA

Citation: Md. Giles et al., IMPLANTATION DAMAGE AND TRANSIENT ENHANCED DIFFUSION MODELING, Solid state technology, 41(2), 1998, pp. 97

Authors: RASHAP BA ELTA ME ETEMAD H FOURNIER JP FREUDENBERG JS GILES MD GRIZZLE JW KABAMBA PT KHARGONEKAR PP LAFORTUNE S MOYNE JR TENEKETZIS D TERRY FL

Citation: Ba. Rashap et al., CONTROL OF SEMICONDUCTOR MANUFACTURING EQUIPMENT - REAL-TIME FEEDBACK-CONTROL OF A REACTIVE ION ETCHER, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 286-297

Authors: HANISH PD GRIZZLE JW GILES MD TERRY FL

Citation: Pd. Hanish et al., A MODEL-BASED TECHNIQUE FOR REAL-TIME ESTIMATION OF ABSOLUTE FLUORINECONCENTRATION IN A CF4 AR PLASMA/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1802-1807

Authors: GILES MD BONING DS CHIN GR DIETRICH WC KARASICK MS LAW ME MOZUMDER PK NACKMAN LR RAJAN VT WALKER DMH WANG RH WONG AS

Citation: Md. Giles et al., SEMICONDUCTOR WAFER REPRESENTATION FOR TCAD, IEEE transactions on computer-aided design of integrated circuits and systems, 13(1), 1994, pp. 82-95

Authors: GILES MD

Citation: Md. Giles, TRANSIENT PHOSPHORUS DIFFUSION FROM SILICON AND ARGON IMPLANTATION DAMAGE, Applied physics letters, 62(16), 1993, pp. 1940-1942