AAAAAA

   
Results: 1-5 |
Results: 5

Authors: BIDEUX L ROBERT C MERLE S GRUZZA B GOUMET E GILLAFON E
Citation: L. Bideux et al., SOME APPLICATIONS OF ELASTIC PEAK ELECTRON-SPECTROSCOPY FOR SEMICONDUCTOR SURFACE STUDIES, Surface and interface analysis, 26(12), 1998, pp. 903-907

Authors: TRASSOUDAINE A PARILLAUD O GOUMET E CASTELLUCI D GILLAFON E CADORET R
Citation: A. Trassoudaine et al., KINETIC-STUDY OF SI INCORPORATION IN INP BY THE HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 192(3-4), 1998, pp. 402-409

Authors: CADORET R GILLAFON E
Citation: R. Cadoret et E. Gillafon, GAAS GROWTH MECHANISMS OF EXACT AND MISOR IENTED (001) FACES BY THE CHLORIDE METHOD IN H-2 - SURFACE-DIFFUSION, SPIRAL GROWTH, HCL AND GACL3 DESORPTION MECHANISMS, Journal de physique. I, 7(7), 1997, pp. 889-907

Authors: PARILLAUD O GILLAFON E GERARD B ETIENNE P PRIBAT D
Citation: O. Parillaud et al., HIGH-QUALITY INP ON SI BY CONFORMAL GROWTH, Applied physics letters, 68(19), 1996, pp. 2654-2656

Authors: GILLAFON E PIFFAULT N CADORET R
Citation: E. Gillafon et al., KINETIC EXPRESSION AND STUDY OF THE GROWTH-RATE OF MISMATCHED (GA,IN)AS INP STRUCTURES GROWN BY HYDRIDE VAPOR-PHASE EPITAXY/, Journal of crystal growth, 151(1-2), 1995, pp. 80-90
Risultati: 1-5 |