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Results: 1-19 |
Results: 19
SIC-SEEDED CRYSTAL-GROWTH
Authors: GLASS RC HENSHALL D TSVETKOV VF CARTER CH
Citation: Rc. Glass et al., SIC-SEEDED CRYSTAL-GROWTH, MRS bulletin, 22(3), 1997, pp. 30-35
SIC SEEDED CRYSTAL-GROWTH
Authors: GLASS RC HENSHALL D TSVETKOV VF CARTER CH
Citation: Rc. Glass et al., SIC SEEDED CRYSTAL-GROWTH, Physica status solidi. b, Basic research, 202(1), 1997, pp. 149-162
4H-SIC MESFETS WITH 42 GHZ F(MAX)
Authors: SRIRAM S AUGUSTINE G BURK AA GLASS RC HOBGOOD HM ORPHANOS PA ROWLAND LB SMITH TJ BRANDT CD DRIVER MC HOPKINS RH
Citation: S. Sriram et al., 4H-SIC MESFETS WITH 42 GHZ F(MAX), IEEE electron device letters, 17(7), 1996, pp. 369-371
DEFECT ANALYSIS IN LELY-GROWN 6H SIC
Authors: TUOMINEN M PRIEUR E YAKIMOVA R GLASS RC TUOMI T JANZEN E
Citation: M. Tuominen et al., DEFECT ANALYSIS IN LELY-GROWN 6H SIC, Journal of crystal growth, 165(3), 1996, pp. 233-244
OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., OPTICAL AND ELECTRICAL CHARACTERIZATION OF BORON IMPURITIES IN SILICON-CARBIDE GROWN BY PHYSICAL VAPOR TRANSPORT, Journal of applied physics, 79(5), 1996, pp. 2326-2331
DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC
Authors: JENNY JR SKOWRONSKI J MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., DEEP-LEVEL TRANSIENT SPECTROSCOPIC AND HALL-EFFECT INVESTIGATION OF THE POSITION OF THE VANADIUM ACCEPTOR LEVEL IN 4H AND 6H SIC, Applied physics letters, 68(14), 1996, pp. 1963-1965
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW GLASS RC
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001), Journal of materials research, 10(3), 1995, pp. 668-679
PHARMACOKINETIC COMPARISON OF ORAL AND LOCAL-ACTION TRANSCUTANEOUS FLURBIPROFEN IN HEALTHY-VOLUNTEERS
Authors: TABURET AM SINGLAS E GLASS RC THOMAS F LEUTENEGGER E
Citation: Am. Taburet et al., PHARMACOKINETIC COMPARISON OF ORAL AND LOCAL-ACTION TRANSCUTANEOUS FLURBIPROFEN IN HEALTHY-VOLUNTEERS, Journal of clinical pharmacy and therapeutics, 20(2), 1995, pp. 101-107
GROWTH OF 3C-SIC ON ON-AXIS SI(100) SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION
Authors: KORDINA O BJORKETUN LO HENRY A HALLIN C GLASS RC HULTMAN L SUNDGREN JE JANZEN E
Citation: O. Kordina et al., GROWTH OF 3C-SIC ON ON-AXIS SI(100) SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 154(3-4), 1995, pp. 303-314
STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES
Authors: NIKITINA IP GLASS RC JANZEN E GUSEVA NB MALTSEV AA
Citation: Ip. Nikitina et al., STRUCTURAL-ANALYSIS OF 4H-SIC LAYERS GROWN ON 6H-SIC AND 15R-SIC SUBSTRATES, Journal of crystal growth, 152(4), 1995, pp. 292-299
ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., ON THE COMPENSATION MECHANISM IN HIGH-RESISTIVITY 6H-SIC DOPED WITH VANADIUM, Journal of applied physics, 78(6), 1995, pp. 3839-3842
VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES
Authors: JENNY JR SKOWRONSKI M MITCHEL WC HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH
Citation: Jr. Jenny et al., VANADIUM RELATED NEAR-BAND-EDGE ABSORPTION-BANDS IN 3 SIC POLYTYPES, Journal of applied physics, 78(5), 1995, pp. 3160-3163
CHARACTERIZATION OF POLISHING-RELATED SURFACE DAMAGE IN (0001) SILICON-CARBIDE SUBSTRATES
Authors: QIAN W SKOWRONSKI M AUGUSTINE G GLASS RC HOBGOOD HM HOPKINS RH
Citation: W. Qian et al., CHARACTERIZATION OF POLISHING-RELATED SURFACE DAMAGE IN (0001) SILICON-CARBIDE SUBSTRATES, Journal of the Electrochemical Society, 142(12), 1995, pp. 4290-4294
SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT
Authors: HOBGOOD HM GLASS RC AUGUSTINE G HOPKINS RH JENNY J SKOWRONSKI M MITCHEL WC ROTH M
Citation: Hm. Hobgood et al., SEMIINSULATING 6H-SIC GROWN BY PHYSICAL VAPOR TRANSPORT, Applied physics letters, 66(11), 1995, pp. 1364-1366
EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED,(100)-TEXTURED DIAMOND FILMS ON SILICON
Authors: FOX BA STONER BR MALTA DM ELLIS PJ GLASS RC SIVAZLIAN FR
Citation: Ba. Fox et al., EPITAXIAL NUCLEATION, GROWTH AND CHARACTERIZATION OF HIGHLY ORIENTED,(100)-TEXTURED DIAMOND FILMS ON SILICON, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 382-387
CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD
Authors: TUOMINEN M YAKIMOVA R GLASS RC TUOMI T JANZEN E
Citation: M. Tuominen et al., CRYSTALLINE IMPERFECTIONS IN 4H SIC GROWN WITH A SEEDED LELY METHOD, Journal of crystal growth, 144(3-4), 1994, pp. 267-276
STRUCTURAL MACRO-DEFECTS IN 6H-SIC WAFERS
Authors: GLASS RC KJELLBERG LO TSVETKOV VF SUNDGREN JE JANZEN E
Citation: Rc. Glass et al., STRUCTURAL MACRO-DEFECTS IN 6H-SIC WAFERS, Journal of crystal growth, 132(3-4), 1993, pp. 504-512
GROWTH OF EPITAXIAL 3C-SIC FILMS ON (111) SILICON SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING
Authors: WAHAB Q GLASS RC IVANOV IP BIRCH J SUNDGREN JE WILLANDER M
Citation: Q. Wahab et al., GROWTH OF EPITAXIAL 3C-SIC FILMS ON (111) SILICON SUBSTRATES AT 850-DEGREES-C BY REACTIVE MAGNETRON SPUTTERING, Journal of applied physics, 74(3), 1993, pp. 1663-1669
HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION
Authors: STONER BR KAO CT MALTA DM GLASS RC
Citation: Br. Stoner et al., HALL-EFFECT MEASUREMENTS ON BORON-DOPED, HIGHLY ORIENTED DIAMOND FILMS GROWN ON SILICON VIA MICROWAVE PLASMA CHEMICAL-VAPOR DEPOSITION, Applied physics letters, 62(19), 1993, pp. 2347-2349
Risultati: 1-19 |