Authors: GLOWACKI G GAPINSKI A DERKOWSKA B BALA W SAHRAOUI B

Citation: G. Glowacki et al., OPTICAL-PROPERTIES OF ZN1-XMGXSE EPILAYERS STUDIED BY SPECTROSCOPY METHODS, Acta Physica Polonica. A, 94(2), 1998, pp. 321-325

Authors: RENUCCI MA FRANDON J GLOWACKI G GAPINSKI A ROZPLOCH F BALA W

Citation: Ma. Renucci et al., RAMAN ANALYSIS OF ZN1-XMGXSE LAYERS GROWN ON GAAS AND ZNTE SUBSTRATES, Acta Physica Polonica. A, 90(5), 1996, pp. 1065-1069

Authors: BALA W GLOWACKI G GAPINSKI A

Citation: W. Bala et al., DEPENDENCE OF EXCITON LINEWIDTH ON THE COMPOSITION OF ZNXMG1-XSE LAYERS GROWN BY MBE, Acta Physica Polonica. A, 88(4), 1995, pp. 667-670

Authors: BALA W GLOWACKI G LUKASIAK Z DROZDOWSKI M KOZIELSKI M NOSSARZEWSKAORLOWSKA E BRZOZOWSKI A

Citation: W. Bala et al., PHOTOLUMINESCENCE, REFLECTIVITY AND RAMAN INVESTIGATIONS OF NANOCRYSTALLITES IN LUMINESCENT POROUS SILICON, Acta Physica Polonica. A, 87(2), 1995, pp. 445-448

Authors: BALA W FIRSZT F GLOWACKI G GAPINSKI A DZIK J

Citation: W. Bala et al., LUMINESCENCE OF ZNXMG1-XSE LAYERS OBTAINED BY THERMAL-DIFFUSION OF MGINTO ZNSE AND ZNXMG1-XSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 87(1), 1995, pp. 161-164