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Authors: GODET C
Citation: C. Godet, METASTABLE HYDROGEN-ATOM TRAPPING IN HYDROGENATED AMORPHOUS-SILICON FILMS - A MICROSCOPIC MODEL FOR METASTABLE DEFECT CREATION, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(3), 1998, pp. 765-777

Authors: GODET C
Citation: C. Godet, LIGHT-INDUCED DEFECT CREATION IN A-SI-H - METASTABLE DEFECTS OR METASTABLE H-ATOMS, Journal of non-crystalline solids, 230, 1998, pp. 272-275

Authors: SENEMAUD C GHEORGHIUDELAROCQUE A BONNEFONT PA HEITZ T GODET C BOUREE JE
Citation: C. Senemaud et al., LOCAL ORDER STUDIES OF C-RICH AMORPHOUS SILICON-CARBON THIN-FILMS, Journal of non-crystalline solids, 230, 1998, pp. 447-451

Authors: BOUREE JE HEITZ T GODET C DREVILLON B CONDE JP CHU V BERBERANSANTOS MN FEDOROV A
Citation: Je. Bouree et al., PHOTOLUMINESCENCE OF POLYMER-LIKE AMORPHOUS-CARBON FILMS GROWN IN DIFFERENT PLASMA REACTORS, Journal of non-crystalline solids, 230, 1998, pp. 574-578

Authors: HEITZ T DREVILLON B BOUREE JE GODET C
Citation: T. Heitz et al., EARLY STAGES OF THE GROWTH OF HYDROGENATED AMORPHOUS-CARBON INVESTIGATED BY IN-SITU INFRARED ELLIPSOMETRY, Journal of non-crystalline solids, 230, 1998, pp. 636-640

Authors: GODET C HEITZ T BOUREE JE DREVILLON B CLERC C
Citation: C. Godet et al., GROWTH AND COMPOSITION OF DUAL-PLASMA POLYMER-LIKE AMORPHOUS-CARBON FILMS, Journal of applied physics, 84(7), 1998, pp. 3919-3932

Authors: ETEMADI R GODET C PERRIN J SEIGNAC A BALLUTAUD D
Citation: R. Etemadi et al., OPTICAL AND COMPOSITIONAL STUDY OF SILICON-OXIDE THIN-FILMS DEPOSITEDIN A DUAL-MODE (MICROWAVE RADIOFREQUENCY) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR/, Journal of applied physics, 83(10), 1998, pp. 5224-5232

Authors: ZHU M HAN Y WEHRSPOHN RB GODET C ETEMADI R BALLUTAUD D
Citation: M. Zhu et al., THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE FROM SILICON-OXIDE THIN-FILMSPREPARED BY DUAL-PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(10), 1998, pp. 5386-5393

Authors: HEITZ T DREVILLON B BOUREE JE GODET C
Citation: T. Heitz et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS CARBON SI INTERFACE FORMATION/, Applied physics letters, 72(7), 1998, pp. 780-782

Authors: GUEDJ C BOULMER J NOUET G GODET C CABARROCAS PRI
Citation: C. Guedj et al., NEW BUFFER CONCEPT INHERENT TO PULSED-LASER INDUCED EPITAXY, Applied physics letters, 72(18), 1998, pp. 2292-2294

Authors: ETEMADI R GODET C PERRIN J
Citation: R. Etemadi et al., PHENOMENOLOGY OF A DUAL-MODE MICROWAVE RF DISCHARGE USED FOR THE DEPOSITION OF SILICON-OXIDE THIN-LAYERS/, Plasma sources science & technology, 6(3), 1997, pp. 323-333

Authors: ETEMADI R GODET C PERRIN J DREVILLON B HUC J PAREY JY ROSTAING JC COEURET F
Citation: R. Etemadi et al., DUAL-PLASMA REACTOR FOR LOW-TEMPERATURE DEPOSITION OF WIDE BAND-GAP SILICON ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 320-331

Authors: EBOTHE J CABARROCAS PRI GODET C EQUER B
Citation: J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109

Authors: BOUREE JE GODET C ETEMADI R DREVILLON B
Citation: Je. Bouree et al., DUAL-MODE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION (PECVD) OF POLYMER-LIKE A-C-H FILMS - VIBRATIONAL AND OPTICAL-PROPERTIES, Synthetic metals, 76(1-3), 1996, pp. 191-194

Authors: ETEMADI R GODET C PERRIN J BOUREE J DREVILLON B CLERC C
Citation: R. Etemadi et al., HYDROGEN INCORPORATION IN DUAL-MODE PECVD AMORPHOUS-SILICON OXIDE THIN-FILMS, Surface & coatings technology, 80(1-2), 1996, pp. 8-12

Authors: GUEDJ C BOULMER J BOUCHIER D CLERC C CALVARIN G GODET C CABARROCAS PRI HOUZE F MENCARAGLIA D
Citation: C. Guedj et al., BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 102, 1996, pp. 28-32

Authors: BOUREE JE GODET C DREVILLON B ETEMADI R HEITZ T CERNOGORA J FAVE JL
Citation: Je. Bouree et al., OPTICAL AND LUMINESCENCE PROPERTIES OF POLYMER-LIKE A-C-H FILMS DEPOSITED IN A DUAL-MODE PECVD REACTOR, Journal of non-crystalline solids, 200, 1996, pp. 623-627

Authors: GODET C MORIN P CABARROCAS PR
Citation: C. Godet et al., INFLUENCE OF THE DILUTE-PHASE SIH BOND CONCENTRATION ON THE STEADY-STATE DEFECT DENSITY IN A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 449-452

Authors: VIGNOLI S MEAUDRE R MEAUDRE M CABARROCAS PR GODET C MORIN P
Citation: S. Vignoli et al., STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS, Journal of non-crystalline solids, 200, 1996, pp. 474-477

Authors: GODET C CABARROCAS PRI
Citation: C. Godet et Pri. Cabarrocas, ROLE OF SI-H BONDING IN A-SI-H METASTABILITY, Journal of applied physics, 80(1), 1996, pp. 97-102

Authors: GODET C ETEMADI R CLERC C
Citation: C. Godet et al., HELIUM ION-INDUCED STOICHIOMETRY MODIFICATION IN HYDROGENATED SILICON-OXIDE FILMS, Applied physics letters, 69(25), 1996, pp. 3845-3847

Authors: ETEMADI R GODET C KILDEMO M BOUREE JE BRENOT R DREVILLON B
Citation: R. Etemadi et al., DUAL-MODE RADIO-FREQUENCY MICROWAVE PLASMA DEPOSITION OF AMORPHOUS-SILICON OXIDE THIN-FILMS, Journal of non-crystalline solids, 187, 1995, pp. 70-74

Authors: BOULMER J BOUCAUD P GUEDJ C DEBARRE D BOUCHIER D FINKMAN E PRAWER S NUGENT K DESMURLARRE A GODET C CABARROCAS PRI
Citation: J. Boulmer et al., REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/, Journal of crystal growth, 157(1-4), 1995, pp. 436-441

Authors: GODET C LAYADI N CABARROCAS PRI
Citation: C. Godet et al., ROLE OF MOBILE HYDROGEN IN THE AMORPHOUS-SILICON RECRYSTALLIZATION, Applied physics letters, 66(23), 1995, pp. 3146-3148

Authors: GODET C
Citation: C. Godet, COLLECTIVE PHONON INTERACTION AND ANNEALING OF METASTABLE DEFECTS IN AMORPHOUS-SEMICONDUCTORS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(4), 1994, pp. 1003-1015
Risultati: 1-25 | 26-29