Citation: C. Godet, METASTABLE HYDROGEN-ATOM TRAPPING IN HYDROGENATED AMORPHOUS-SILICON FILMS - A MICROSCOPIC MODEL FOR METASTABLE DEFECT CREATION, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(3), 1998, pp. 765-777
Citation: C. Godet, LIGHT-INDUCED DEFECT CREATION IN A-SI-H - METASTABLE DEFECTS OR METASTABLE H-ATOMS, Journal of non-crystalline solids, 230, 1998, pp. 272-275
Authors:
SENEMAUD C
GHEORGHIUDELAROCQUE A
BONNEFONT PA
HEITZ T
GODET C
BOUREE JE
Citation: C. Senemaud et al., LOCAL ORDER STUDIES OF C-RICH AMORPHOUS SILICON-CARBON THIN-FILMS, Journal of non-crystalline solids, 230, 1998, pp. 447-451
Authors:
BOUREE JE
HEITZ T
GODET C
DREVILLON B
CONDE JP
CHU V
BERBERANSANTOS MN
FEDOROV A
Citation: Je. Bouree et al., PHOTOLUMINESCENCE OF POLYMER-LIKE AMORPHOUS-CARBON FILMS GROWN IN DIFFERENT PLASMA REACTORS, Journal of non-crystalline solids, 230, 1998, pp. 574-578
Citation: T. Heitz et al., EARLY STAGES OF THE GROWTH OF HYDROGENATED AMORPHOUS-CARBON INVESTIGATED BY IN-SITU INFRARED ELLIPSOMETRY, Journal of non-crystalline solids, 230, 1998, pp. 636-640
Authors:
GODET C
HEITZ T
BOUREE JE
DREVILLON B
CLERC C
Citation: C. Godet et al., GROWTH AND COMPOSITION OF DUAL-PLASMA POLYMER-LIKE AMORPHOUS-CARBON FILMS, Journal of applied physics, 84(7), 1998, pp. 3919-3932
Authors:
ETEMADI R
GODET C
PERRIN J
SEIGNAC A
BALLUTAUD D
Citation: R. Etemadi et al., OPTICAL AND COMPOSITIONAL STUDY OF SILICON-OXIDE THIN-FILMS DEPOSITEDIN A DUAL-MODE (MICROWAVE RADIOFREQUENCY) PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION REACTOR/, Journal of applied physics, 83(10), 1998, pp. 5224-5232
Authors:
ZHU M
HAN Y
WEHRSPOHN RB
GODET C
ETEMADI R
BALLUTAUD D
Citation: M. Zhu et al., THE ORIGIN OF VISIBLE PHOTOLUMINESCENCE FROM SILICON-OXIDE THIN-FILMSPREPARED BY DUAL-PLASMA CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(10), 1998, pp. 5386-5393
Citation: T. Heitz et al., IN-SITU INFRARED ELLIPSOMETRY STUDY OF HYDROGENATED AMORPHOUS CARBON SI INTERFACE FORMATION/, Applied physics letters, 72(7), 1998, pp. 780-782
Citation: R. Etemadi et al., PHENOMENOLOGY OF A DUAL-MODE MICROWAVE RF DISCHARGE USED FOR THE DEPOSITION OF SILICON-OXIDE THIN-LAYERS/, Plasma sources science & technology, 6(3), 1997, pp. 323-333
Authors:
ETEMADI R
GODET C
PERRIN J
DREVILLON B
HUC J
PAREY JY
ROSTAING JC
COEURET F
Citation: R. Etemadi et al., DUAL-PLASMA REACTOR FOR LOW-TEMPERATURE DEPOSITION OF WIDE BAND-GAP SILICON ALLOYS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 320-331
Citation: J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109
Citation: Je. Bouree et al., DUAL-MODE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION (PECVD) OF POLYMER-LIKE A-C-H FILMS - VIBRATIONAL AND OPTICAL-PROPERTIES, Synthetic metals, 76(1-3), 1996, pp. 191-194
Authors:
GUEDJ C
BOULMER J
BOUCHIER D
CLERC C
CALVARIN G
GODET C
CABARROCAS PRI
HOUZE F
MENCARAGLIA D
Citation: C. Guedj et al., BULK AND SURFACE STRUCTURAL-PROPERTIES OF SI1-X-YGEXCY LAYERS PROCESSED ON SI(001) BY PULSED-LASER INDUCED EPITAXY, Applied surface science, 102, 1996, pp. 28-32
Authors:
BOUREE JE
GODET C
DREVILLON B
ETEMADI R
HEITZ T
CERNOGORA J
FAVE JL
Citation: Je. Bouree et al., OPTICAL AND LUMINESCENCE PROPERTIES OF POLYMER-LIKE A-C-H FILMS DEPOSITED IN A DUAL-MODE PECVD REACTOR, Journal of non-crystalline solids, 200, 1996, pp. 623-627
Citation: C. Godet et al., INFLUENCE OF THE DILUTE-PHASE SIH BOND CONCENTRATION ON THE STEADY-STATE DEFECT DENSITY IN A-SI-H, Journal of non-crystalline solids, 200, 1996, pp. 449-452
Authors:
VIGNOLI S
MEAUDRE R
MEAUDRE M
CABARROCAS PR
GODET C
MORIN P
Citation: S. Vignoli et al., STABILITY VERSUS STRUCTURE IN GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON OBTAINED FROM A WIDE-RANGE OF DEPOSITION CONDITIONS, Journal of non-crystalline solids, 200, 1996, pp. 474-477
Citation: C. Godet et al., HELIUM ION-INDUCED STOICHIOMETRY MODIFICATION IN HYDROGENATED SILICON-OXIDE FILMS, Applied physics letters, 69(25), 1996, pp. 3845-3847
Authors:
ETEMADI R
GODET C
KILDEMO M
BOUREE JE
BRENOT R
DREVILLON B
Citation: R. Etemadi et al., DUAL-MODE RADIO-FREQUENCY MICROWAVE PLASMA DEPOSITION OF AMORPHOUS-SILICON OXIDE THIN-FILMS, Journal of non-crystalline solids, 187, 1995, pp. 70-74
Authors:
BOULMER J
BOUCAUD P
GUEDJ C
DEBARRE D
BOUCHIER D
FINKMAN E
PRAWER S
NUGENT K
DESMURLARRE A
GODET C
CABARROCAS PRI
Citation: J. Boulmer et al., REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/, Journal of crystal growth, 157(1-4), 1995, pp. 436-441
Citation: C. Godet, COLLECTIVE PHONON INTERACTION AND ANNEALING OF METASTABLE DEFECTS IN AMORPHOUS-SEMICONDUCTORS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 70(4), 1994, pp. 1003-1015