Authors:
GOLDAMMER KJ
LIU WK
KHODAPARAST GA
LINDSTROM SC
JOHNSON MB
Citation: Kj. Goldammer et al., ELECTRICAL-PROPERTIES OF INSB QUANTUM-WELLS REMOTELY DOPED WITH SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1367-1371
Citation: Wk. Liu et al., EFFECT OF SUBSTRATE-TEMPERATURE ON SI COMPENSATION IN DELTA-DOPED INSB AND ALXIN1-XSB GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 84(1), 1998, pp. 205-208
Authors:
DAI N
BROWN F
DOEZEMA RE
CHUNG SJ
GOLDAMMER KJ
SANTOS MB
Citation: N. Dai et al., DETERMINATION OF THE CONCENTRATION AND TEMPERATURE-DEPENDENCE OF THE FUNDAMENTAL ENERGY-GAP IN ALXIN1-XSB, Applied physics letters, 73(21), 1998, pp. 3132-3134