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Results:
1-18
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Results: 18
Authors:
LIANG WC
KERR DC
GOLDSMAN N
MAYERGOYZ ID
Citation: Wc. Liang et al., HYDRODYNAMIC DEVICE SIMULATION WITH NEW STATE VARIABLES SPECIALLY CHOSEN FOR A BLOCK GUMMEL ITERATIVE APPROACH, VLSI design (Print), 6(1-4), 1998, pp. 191-195
Authors:
LIANG WC
GOLDSMAN N
MAYERGOYZ I
Citation: Wc. Liang et al., A NEW SELF-CONSISTENT 2D DEVICE SIMULATOR BASED ON DETERMINISTIC SOLUTION OF THE BOLTZMANN, POISSON AND HOLE-CONTINUITY EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 251-256
Authors:
SINGH SP
GOLDSMAN N
MAYERGOYZ ID
Citation: Sp. Singh et al., SELF-CONSISTENT SOLUTION OF THE MULTI BAND BOLTZMANN, POISSON AND HOLE-CONTINUITY EQUATIONS, VLSI design (Print), 6(1-4), 1998, pp. 257-260
Authors:
KERR DC
GOLDSMAN N
MAYERGOYZ ID
Citation: Dc. Kerr et al., 3-DIMENSIONAL HYDRODYNAMIC MODELING OF MOSFET DEVICES, VLSI design (Print), 6(1-4), 1998, pp. 261-265
Authors:
HUANG MW
GOLDSMAN N
CHANG CH
MAYERGOYZ I
MCGARRITY JM
WOOLARD D
Citation: Mw. Huang et al., DETERMINING 4H SILICON-CARBIDE ELECTRONIC-PROPERTIES THROUGH COMBINEDUSE OF DEVICE SIMULATION AND METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR TERMINAL CHARACTERISTICS, Journal of applied physics, 84(4), 1998, pp. 2065-2070
Authors:
KRISHNAN MS
GOLDSMAN N
CHRISTOU A
Citation: Ms. Krishnan et al., TRANSPORT SIMULATION OF BULK ALXGA1-XN AND THE 2-DIMENSIONAL ELECTRON-GAS AT THE ALXGA1-XN GAN INTERFACE/, Journal of applied physics, 83(11), 1998, pp. 5896-5903
Authors:
SHEN CC
MURGUIA J
GOLDSMAN N
PECKERAR M
MELNGAILIS J
ANTONIADIS DA
Citation: Cc. Shen et al., USE OF FOCUSED-ION-BEAM AND MODELING TO OPTIMIZE SUBMICRON MOSFET CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 453-459
Authors:
WANG W
CHANG C
MA D
PECKERAR M
BERRY I
GOLDSMAN N
MELNGAILIS J
Citation: W. Wang et al., SELF-ALIGNED SUBCHANNEL IMPLANT COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICES FABRICATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2816-2820
Authors:
LIANG WC
GOLDSMAN N
MAYERGOYZ I
OLDIGES PJ
Citation: Wc. Liang et al., 2-D MOSFET MODELING INCLUDING SURFACE EFFECTS AND IMPACT IONIZATION BY SELF-CONSISTENT SOLUTION OF THE BOLTZMANN, POISSON, AND HOLE-CONTINUITY EQUATIONS, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 257-267
Authors:
LIANG WC
KERR DC
GOLDSMAN N
MAYERGOYZ ID
Citation: Wc. Liang et al., HYDRODYNAMIC DEVICE SIMULATION USING NEW STATE VARIABLES TAILORED FORA BLOCK GUMMEL ITERATIVE APPROACH, Solid-state electronics, 39(8), 1996, pp. 1213-1220
Authors:
SINGH SP
GOLDSMAN N
MAYERGOYZ ID
Citation: Sp. Singh et al., MODELING MULTIBAND EFFECTS OF HOT-ELECTRON TRANSPORT IN SILICON BY SELF-CONSISTENT SOLUTION OF THE BOLTZMANN TRANSPORT AND POISSON EQUATIONS, Solid-state electronics, 39(12), 1996, pp. 1695-1700
Authors:
STANLEY J
GOLDSMAN N
Citation: J. Stanley et N. Goldsman, FULL-ZONE HOLE DISPERSION-RELATIONS IN SI USING SCHUR-COMPLEMENT DECOMPOSITION, Physical review. B, Condensed matter, 51(8), 1995, pp. 4931-4939
Authors:
HENNACY KA
WU YJ
GOLDSMAN N
MAYERGOYZ ID
Citation: Ka. Hennacy et al., DETERMINISTIC MOSFET SIMULATION USING A GENERALIZED SPHERICAL HARMONIC EXPANSION OF THE BOLTZMANN-EQUATION, Solid-state electronics, 38(8), 1995, pp. 1485-1495
Authors:
WU YJ
GOLDSMAN N
Citation: Yj. Wu et N. Goldsman, DETERMINISTIC MODELING OF IMPACT IONIZATION WITH A RANDOM-K APPROXIMATION AND THE MULTIBAND BOLTZMANN-EQUATION, Journal of applied physics, 78(8), 1995, pp. 5174-5176
Authors:
LIN Q
GOLDSMAN N
TAI GC
Citation: Q. Lin et al., HIGHLY STABLE AND ROUTINELY CONVERGENT 2-DIMENSIONAL HYDRODYNAMIC DEVICE SIMULATION, Solid-state electronics, 37(2), 1994, pp. 359-371
Authors:
ABRAMO A
BAUDRY L
BRUNETTI R
CASTAGNE R
CHAREF M
DESSENNE F
DOLLFUS P
DUTTON R
ENGL WL
FAUQUEMBERGUE R
FIEGNA C
FISCHETTI MV
GALDIN S
GOLDSMAN N
HACKEL M
HAMAGUCHI C
HESS K
HENNACY K
HESTO P
HIGMAN JM
IIZUKA T
JUNGEMANN C
KAMAKURA Y
KOSINA H
KUNIKIYO T
LAUX SE
LIM HC
MAZIAR C
MIZUNO H
PEIFER HJ
RAMASWAMY S
SANO N
SCORBOHACI PG
SELBERHERR S
TAKENAKA M
TANG TW
TANIGUCHI K
THOBEL JL
THOMA R
TOMIZAWA K
TOMIPZAWA M
VOGELSANG T
WANG SL
WANG XL
YAO CS
YODER PD
YOSHII A
Citation: A. Abramo et al., A COMPARISON OF NUMERICAL-SOLUTIONS OF THE BOLTZMANN TRANSPORT-EQUATION FOR HIGH-ENERGY ELECTRON-TRANSPORT SILICON, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1646-1654
Authors:
WANG SL
GOLDSMAN N
LIN Q
FREY J
Citation: Sl. Wang et al., RELY - A PHYSICS-BASED CAD TOOL FOR PREDICTING TIME-DEPENDENT HOT-ELECTRON-INDUCED DEGRADATION IN MOSFETS, Solid-state electronics, 36(6), 1993, pp. 833-841
Authors:
HENNACY KA
GOLDSMAN N
Citation: Ka. Hennacy et N. Goldsman, A GENERALIZED LEGENDRE POLYNOMIAL SPARSE-MATRIX APPROACH FOR DETERMINING THE DISTRIBUTION FUNCTION IN NONPOLAR SEMICONDUCTORS, Solid-state electronics, 36(6), 1993, pp. 869-877
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