Authors:
MISHURNYI VA
DEANDA F
GORBATCHEV AY
DELCASTILLO ICH
NIETONAVARRO J
Citation: Va. Mishurnyi et al., A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS, Journal of electronic materials, 27(8), 1998, pp. 1003-1004
Authors:
BERISHEV IE
GORBATCHEV AY
DELCASTILLO ICH
ORTIZ MI
RODRIGUEZPEDROZA G
MISHOURNYI VA
Citation: Ie. Berishev et al., PREPARATION AND ANALYSIS OF LASER HETEROS TRUCTURES IN INGAASP GAAS AND INGAASP/INP WITH WAVE EMISSION BETWEEN 0.8 AND 1.3 MICROMETERS/, Revista Mexicana de Fisica, 44(3), 1998, pp. 282-289