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Results: 4

Authors: MISHURNYI VA DEANDA F GORBATCHEV AY DELCASTILLO ICH NIETONAVARRO J
Citation: Va. Mishurnyi et al., A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS, Journal of electronic materials, 27(8), 1998, pp. 1003-1004

Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI SMIRNOV VM FALEEV NN
Citation: Va. Mishurnyi et al., ALGAASSB AND ALGAINASSB GROWTH FROM SB-RICH SOLUTIONS, Crystal research and technology, 33(3), 1998, pp. 457-464

Authors: BERISHEV IE GORBATCHEV AY DELCASTILLO ICH ORTIZ MI RODRIGUEZPEDROZA G MISHOURNYI VA
Citation: Ie. Berishev et al., PREPARATION AND ANALYSIS OF LASER HETEROS TRUCTURES IN INGAASP GAAS AND INGAASP/INP WITH WAVE EMISSION BETWEEN 0.8 AND 1.3 MICROMETERS/, Revista Mexicana de Fisica, 44(3), 1998, pp. 282-289

Authors: MISHURNYI VA DEANDA F GORBATCHEV AY VASILEV VI FALEEV NN
Citation: Va. Mishurnyi et al., INGAASSB GROWTH FROM SB-RICH SOLUTIONS, Journal of crystal growth, 180(1), 1997, pp. 34-39
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