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Results: 1-25/92
Authors:
BELOV AY
CONRAD D
SCHEERSCHMIDT K
GOSELE U
Citation: Ay. Belov et al., ATOMISTIC STUDY OF THE (001), 90-DEGREES TWIST BOUNDARY IN SILICON, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 77(1), 1998, pp. 55-65
Authors:
PIGNOLET A
CURRAN C
ALEXE M
SENZ S
HESSE D
GOSELE U
Citation: A. Pignolet et al., EPITAXIAL AND LARGE-AREA PLD FERROELECTRIC THIN-FILM HETEROSTRUCTURESON SILICON SUBSTRATES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 485-498
Authors:
ALEXE M
SCOTT JF
PIGNOLET A
HESSE D
GOSELE U
Citation: M. Alexe et al., PB(ZR,TI)O-3-SILICON HETEROSTRUCTURES FABRICATED BY DIRECT WAFER BONDING, Integrated ferroelectrics, 19(1-4), 1998, pp. 95-109
Authors:
SENZ S
PLOSSL A
GOSELE U
ZERLAUTH S
STANGL J
BAUER G
Citation: S. Senz et al., GROWTH OF PARTIALLY STRAIN-RELAXED SI-1-C-Y(Y) EPILAYERS ON (100)SI, Applied physics A: Materials science & processing, 67(2), 1998, pp. 147-150
Authors:
KASTNER G
GOSELE U
TAN TY
Citation: G. Kastner et al., A MODEL OF STRAIN RELAXATION IN HETEROEPITAXIAL FILMS ON COMPLIANT SUBSTRATES, Applied physics A: Materials science & processing, 66(1), 1998, pp. 13-22
Authors:
SCHOLZ R
GOSELE U
WISCHMEYER F
NIEMANN E
Citation: R. Scholz et al., PREVENTION OF MICROPIPES AND VOIDS AT BETA-SIC SI(100) INTERFACES/, Applied physics A: Materials science & processing, 66(1), 1998, pp. 59-67
Authors:
KRAUTER G
SCHUMACHER A
GOSELE U
Citation: G. Krauter et al., LOW-TEMPERATURE SILICON DIRECT BONDING FOR APPLICATION IN MICROMECHANICS - BONDING ENERGIES FOR DIFFERENT COMBINATIONS OF OXIDES, Sensors and actuators. A, Physical, 70(3), 1998, pp. 271-275
Authors:
ALEXE M
PIGNOLET A
SENZ S
HESSE D
GOSELE U
Citation: M. Alexe et al., DIRECT WAFER BONDING - A NEW METHOD FOR FERROELECTRIC-SILICON HETEROSTRUCTURE FABRICATION, Journal of the Korean Physical Society, 32, 1998, pp. 1618-1621
Authors:
ALEXE M
HESSE D
GOSELE U
Citation: M. Alexe et al., DEPOSITION AND PROCESSING OF BISMUTH TITANATE THIN-FILMS FOR DIRECT WAFER BONDING, Materials chemistry and physics, 55(1), 1998, pp. 55-60
Authors:
ZHANG M
WANG LW
GAO JX
LIN CL
HEMMENT PLF
GUTJAHR K
GOSELE U
Citation: M. Zhang et al., GETTERING OF CU BY HE-INDUCED CAVITIES IN SIMOX MATERIALS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(3-4), 1998, pp. 360-364
Authors:
GOSELE U
TONG QY
Citation: U. Gosele et Qy. Tong, SEMICONDUCTOR WAFER BONDING, Annual review of materials science, 28, 1998, pp. 215-241
Authors:
BIRNER A
GRUNING U
OTTOW S
SCHNEIDER A
MULLER F
LEHMANN V
FOLL H
GOSELE U
Citation: A. Birner et al., MACROPOROUS SILICON - A 2-DIMENSIONAL PHOTONIC BANDGAP MATERIAL SUITABLE FOR THE NEAR-INFRARED SPECTRAL RANGE, Physica status solidi. a, Applied research, 165(1), 1998, pp. 111-117
Authors:
SENZ S
EGGER U
SCHULTZ M
GOSELE U
ITO H
Citation: S. Senz et al., INTERDIFFUSION IN GAAS(1-X)SBX GAAS SUPERLATTICES STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION AND SECONDARY-ION MASS-SPECTROSCOPY/, Journal of applied physics, 84(5), 1998, pp. 2546-2550
Authors:
LI AP
MULLER F
BIRNER A
NIELSCH K
GOSELE U
Citation: Ap. Li et al., HEXAGONAL PORE ARRAYS WITH A 50-420 NM INTERPORE DISTANCE FORMED BY SELF-ORGANIZATION IN ANODIC ALUMINA, Journal of applied physics, 84(11), 1998, pp. 6023-6026
Authors:
SCHULTZ M
EGGER U
SCHOLZ R
BREITENSTEIN O
GOSELE U
TAN TY
Citation: M. Schultz et al., EXPERIMENTAL AND COMPUTER-SIMULATION STUDIES OF DIFFUSION MECHANISMS ON THE ARSENIC SUBLATTICE OF GALLIUM-ARSENIDE, Journal of applied physics, 83(10), 1998, pp. 5295-5301
Authors:
TONG QY
LEE TH
HUANG LJ
CHAO YL
GOSELE U
Citation: Qy. Tong et al., SI AND SIC LAYER TRANSFER BY HIGH-TEMPERATURE HYDROGEN IMPLANTATION AND LOWER TEMPERATURE LAYER SPLITTING, Electronics Letters, 34(4), 1998, pp. 407-408
Authors:
JESSENSKY O
MULLER F
GOSELE U
Citation: O. Jessensky et al., SELF-ORGANIZED FORMATION OF HEXAGONAL PORE STRUCTURES IN ANODIC ALUMINA, Journal of the Electrochemical Society, 145(11), 1998, pp. 3735-3740
Authors:
WERNER P
GOSSMANN HJ
JACOBSON DC
GOSELE U
Citation: P. Werner et al., CARBON DIFFUSION IN SILICON, Applied physics letters, 73(17), 1998, pp. 2465-2467
Authors:
ZHANG M
LIN CL
HEMMENT PLF
GUTJAHR K
GOSELE U
Citation: M. Zhang et al., STUDY OF CU GETTERING TO CAVITIES IN SEPARATION BY IMPLANTATION OF OXYGEN SUBSTRATES, Applied physics letters, 72(7), 1998, pp. 830-832
Authors:
SCHOLZ R
GOSELE U
HUH JY
TAN TY
Citation: R. Scholz et al., CARBON-INDUCED UNDERSATURATION OF SILICON SELF-INTERSTITIALS, Applied physics letters, 72(2), 1998, pp. 200-202
Authors:
JESSENSKY O
MULLER F
GOSELE U
Citation: O. Jessensky et al., SELF-ORGANIZED FORMATION OF HEXAGONAL PORE ARRAYS IN ANODIC ALUMINA, Applied physics letters, 72(10), 1998, pp. 1173-1175
Authors:
TONG QY
SCHOLZ R
GOSELE U
LEE TH
HUANG LJ
CHAO YL
TAN TY
Citation: Qy. Tong et al., A SMARTER-CUT APPROACH TO LOW-TEMPERATURE SILICON LAYER TRANSFER, Applied physics letters, 72(1), 1998, pp. 49-51
Authors:
KOCHNEV IV
LEDENTSOV NN
MAXIMOV MV
TSATSULNIKOV AF
SAKHAROV AV
VOLOVIK BV
KOPEV PS
ALFEROV ZI
BIMBERG D
KOSOGOV AO
RUVIMOV SS
WERNER P
GOSELE U
Citation: Iv. Kochnev et al., GROWTH AND CHARACTERIZATION OF COHERENT QUANTUM DOTS GROWN BY SINGLE-CYCLE AND MULTICYCLE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(6B), 1997, pp. 4107-4110
Authors:
MAXIMOV MV
KOCHNEV IV
SHERNYAKOV YM
ZAITSEV SV
GORDEEV NY
TSATSULNIKOV AF
SAKHAROV AV
KRESTNIKOV IL
KOPEV PS
ALFEROV ZI
LEDENTSOV NN
BIMBERG D
KOSOGOV AO
WERNER P
GOSELE U
Citation: Mv. Maximov et al., INGAAS GAAS QUANTUM-DOT LASERS WITH ULTRAHIGH CHARACTERISTIC TEMPERATURE (T-0=385K) GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 36(6B), 1997, pp. 4221-4223
Authors:
EOM CB
HUANG L
RAO RA
TONG QY
GOSELE U
Citation: Cb. Eom et al., FABRICATION OF DOUBLE-SIDED YBA2CU3O7 THIN-FILMS ON 2 INCH DIAMETER LAALO3 WAFERS BY DIRECT WAFER BONDING, IEEE transactions on applied superconductivity, 7(2), 1997, pp. 1244-1248