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Results: 1-25/26
Authors:
AYDIL ES
QUINIOU BOM
LEE JTC
GREGUS JA
GOTTSCHO RA
Citation: Es. Aydil et al., INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS, Solid-state electronics, 42(5), 1998, pp. 75-82
Authors:
BAILEY AD
VANDESANDEN MCM
GREGUS JA
GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 373-373
Authors:
AYDIL ES
GOTTSCHO RA
Citation: Es. Aydil et Ra. Gottscho, PROBING PLASMA SURFACE INTERACTIONS, Solid state technology, 40(10), 1997, pp. 181
Authors:
SHERMAN S
WAGNER S
MUCHA J
GOTTSCHO RA
Citation: S. Sherman et al., SUBSTRATE EFFECT ON PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE, Journal of the Electrochemical Society, 144(9), 1997, pp. 3198-3204
Authors:
GOTTSCHO RA
BARONE ME
COOK JM
Citation: Ra. Gottscho et al., USE OF PLASMA PROCESSING IN MAKING INTEGRATED-CIRCUITS AND FLAT-PANELDISPLAYS, MRS bulletin, 21(8), 1996, pp. 38-42
Authors:
SHERMAN S
WAGNER S
GOTTSCHO RA
Citation: S. Sherman et al., CORRELATION BETWEEN THE VALENCE-BAND-TAIL AND CONDUCTION-BAND-TAIL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON, Applied physics letters, 69(21), 1996, pp. 3242-3244
Authors:
BAILEY AD
GOTTSCHO RA
Citation: Ad. Bailey et Ra. Gottscho, ASPECT RATIO INDEPENDENT ETCHING - FACT OR FANTASY, JPN J A P 1, 34(4B), 1995, pp. 2083-2088
REAL-TIME MONITORING OF SILICON-NITRIDE COMPOSITION DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors:
BAILEY AD
GOTTSCHO RA
Citation: Ad. Bailey et Ra. Gottscho, REAL-TIME MONITORING OF SILICON-NITRIDE COMPOSITION DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 34(4B), 1995, pp. 2172-2181
Authors:
AYDIL ES
ZHOU ZH
GOTTSCHO RA
CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME IN-SITU MONITORING OF SURFACES DURING GLOW-DISCHARGE PROCESSING - NH3 AND H-2 PLASMA PASSIVATION OF GAAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 258-267
SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE
Authors:
BAILEY AD
VANDESANDEN MCM
GREGUS JA
GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 92-104
Authors:
NAQVI SSH
KRUKAR RH
MCNEIL JR
FRANKE JE
NIEMCZYK TM
HAALAND DM
GOTTSCHO RA
KORNBLIT A
Citation: Ssh. Naqvi et al., ETCH DEPTH ESTIMATION OF LARGE-PERIOD SILICON GRATINGS WITH MULTIVARIATE CALIBRATION OF RIGOROUSLY SIMULATED DIFFRACTION PROFILES, Journal of the Optical Society of America. A, Optics, image science,and vision., 11(9), 1994, pp. 2485-2493
Authors:
TEPERMEISTER I
BLAYO N
KLEMENS FP
IBBOTSON DE
GOTTSCHO RA
LEE JTC
SAWIN HH
Citation: I. Tepermeister et al., COMPARISON OF ADVANCED PLASMA SOURCES FOR ETCHING APPLICATIONS .1. ETCHING RATE, UNIFORMITY, AND PROFILE CONTROL IN A HELICON AND A MULTIPLE ELECTRON-CYCLOTRON-RESONANCE SOURCE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2310-2321
Authors:
HARGIS PJ
GREENBERG KE
MILLER PA
GERARDO JB
TORCZYNSKI JR
RILEY ME
HEBNER GA
ROBERTS JR
OLTHOFF JK
WHETSTONE JR
VANBRUNT RJ
SOBOLEWSKI MA
ANDERSON HM
SPLICHAL MP
MOCK JL
BLETZINGER P
GARSCADDEN A
GOTTSCHO RA
SELWYN G
DALVIE M
HEIDENREICH JE
BUTTERBAUGH JW
BRAKE ML
PASSOW ML
PENDER J
LUJAN A
ELTA ME
GRAVES DB
SAWIN HH
KUSHNER MJ
VERDEYEN JT
HORWATH R
TURNER TR
Citation: Pj. Hargis et al., THE GASEOUS ELECTRONICS CONFERENCE RADIOFREQUENCY REFERENCE CELL - A DEFINED PARALLEL-PLATE RADIOFREQUENCY SYSTEM FOR EXPERIMENTAL AND THEORETICAL-STUDIES OF PLASMA-PROCESSING DISCHARGES, Review of scientific instruments, 65(1), 1994, pp. 140-154
Authors:
AYDIL ES
GOTTSCHO RA
CHABAL YJ
Citation: Es. Aydil et al., REAL-TIME MONITORING OF SURFACE-CHEMISTRY DURING PLASMA PROCESSING, Pure and applied chemistry, 66(6), 1994, pp. 1381-1388
Authors:
NAKANO T
GIAPIS KP
GOTTSCHO RA
LEE TC
SADEGHI N
Citation: T. Nakano et al., ION VELOCITY DISTRIBUTIONS IN HELICON WAVE PLASMAS - MAGNETIC-FIELD AND PRESSURE EFFECTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2046-2056
Authors:
GREGUS JA
GREEN CA
YOON E
OSTERMAYER FW
HAYES TR
PAWELEK R
GOTTSCHO RA
SOHAIL S
NAQVI H
Citation: Ja. Gregus et al., REAL-TIME LATENT IMAGE MONITORING DURING HOLOGRAPHIC FABRICATION OF SUBMICRON DIFFRACTION GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2468-2472
Authors:
GOTTSCHO RA
Citation: Ra. Gottscho, ION-TRANSPORT ANISOTROPY IN LOW-PRESSURE, HIGH-DENSITY PLASMAS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(5), 1993, pp. 1884-1889
Authors:
AYDIL ES
GIAPIS KP
GOTTSCHO RA
DONNELLY VM
YOON E
Citation: Es. Aydil et al., AMMONIA PLASMA PASSIVATION OF GAAS IN DOWNSTREAM MICROWAVE AND RADIOFREQUENCY PARALLEL PLATE PLASMA REACTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(2), 1993, pp. 195-205
Authors:
AYDIL ES
GREGUS JA
GOTTSCHO RA
Citation: Es. Aydil et al., MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2883-2892
Authors:
GREGUS JA
VERNON MF
GOTTSCHO RA
SCHELLER GR
HOBSON WS
OPILA RL
YOON E
Citation: Ja. Gregus et al., LOW-TEMPERATURE PLASMA-ETCHING OF GAAS, ALGAAS, AND ALAS, Plasma chemistry and plasma processing, 13(3), 1993, pp. 521-537
Authors:
AYDIL ES
GREGUS JA
GOTTSCHO RA
Citation: Es. Aydil et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR FOR CRYOGENIC ETCHING, Review of scientific instruments, 64(12), 1993, pp. 3572-3584
Authors:
KRUKAR R
KORNBLIT A
CLARK LA
KRUSKAL J
LAMBERT D
REITMAN EA
GOTTSCHO RA
Citation: R. Krukar et al., REACTIVE ION ETCHING PROFILE AND DEPTH CHARACTERIZATION USING STATISTICAL AND NEURAL-NETWORK ANALYSIS OF LIGHT-SCATTERING DATA, Journal of applied physics, 74(6), 1993, pp. 3698-3706
Authors:
GIAPIS KP
SADEGHI N
MARGOT J
GOTTSCHO RA
LEE TCJ
Citation: Kp. Giapis et al., LIMITS TO ION ENERGY CONTROL IN HIGH-DENSITY GLOW-DISCHARGES - MEASUREMENT OF ABSOLUTE METASTABLE ION CONCENTRATIONS, Journal of applied physics, 73(11), 1993, pp. 7188-7194
Authors:
ZHOU ZH
AYDIL ES
GOTTSCHO RA
CHABAL YJ
REIF R
Citation: Zh. Zhou et al., REAL-TIME, IN-SITU MONITORING OF ROOM-TEMPERATURE SILICON SURFACE CLEANING USING HYDROGEN AND AMMONIA PLASMAS, Journal of the Electrochemical Society, 140(11), 1993, pp. 3316-3321
Authors:
AYDIL ES
ZHOU Z
GIAPIS KP
CHABAL Y
GREGUS JA
GOTTSCHO RA
Citation: Es. Aydil et al., REAL-TIME, INSITU MONITORING OF SURFACE-REACTIONS DURING PLASMA PASSIVATION OF GAAS, Applied physics letters, 62(24), 1993, pp. 3156-3158