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Results: 1-11 |
Results: 11
TRENDS IN CONTAMINATION CONTROL IN IC PRODUCTION TOOLS
Authors: GRANNEMAN EHA
Citation: Eha. Granneman, TRENDS IN CONTAMINATION CONTROL IN IC PRODUCTION TOOLS, Solid state technology, 40(7), 1997, pp. 225
STOW STATES IN VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., STOW STATES IN VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 79(3), 1996, pp. 1505-1510
THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E AFANASEV VV GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES, Journal of non-crystalline solids, 187, 1995, pp. 206-210
RECOVERY OF VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., RECOVERY OF VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 78(1), 1995, pp. 306-316
PRODUCTION OF ATOMIC-HYDROGEN IN AL-SIO2-SI SYSTEMS BY VACUUM-ULTRAVIOLET RADIATION
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., PRODUCTION OF ATOMIC-HYDROGEN IN AL-SIO2-SI SYSTEMS BY VACUUM-ULTRAVIOLET RADIATION, Applied physics letters, 67(21), 1995, pp. 3162-3164
FILM INTERFACE CONTROL IN INTEGRATED PROCESSING SYSTEMS
Authors: GRANNEMAN EHA
Citation: Eha. Granneman, FILM INTERFACE CONTROL IN INTEGRATED PROCESSING SYSTEMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2741-2748
NATURE OF DEFECTS IN THE SI-SIO2 SYSTEM GENERATED BY VACUUM-ULTRAVIOLET IRRADIATION
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., NATURE OF DEFECTS IN THE SI-SIO2 SYSTEM GENERATED BY VACUUM-ULTRAVIOLET IRRADIATION, Applied physics letters, 65(3), 1994, pp. 347-349
QUANTIFICATION OF SI3N4 LPCVD INHIBITION ON OXIDE SURFACES
Authors: KWAKMAN LFT LINDOW EJ GRANNEMAN EHA MARTIN F VELER JC JOLY JP
Citation: Lft. Kwakman et al., QUANTIFICATION OF SI3N4 LPCVD INHIBITION ON OXIDE SURFACES, Applied surface science, 70-1, 1993, pp. 629-633
OXIDE-GROWTH IN CLUSTER TOOLS
Authors: GRANNEMAN EHA
Citation: Eha. Granneman, OXIDE-GROWTH IN CLUSTER TOOLS, Microelectronic engineering, 22(1-4), 1993, pp. 11-20
CHARGE-EXCHANGE MECHANISMS OF SLOW STATES IN SI SIO2/
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., CHARGE-EXCHANGE MECHANISMS OF SLOW STATES IN SI SIO2/, Microelectronic engineering, 22(1-4), 1993, pp. 231-234
THIN-FILMS IN THE INTEGRATED-CIRCUIT INDUSTRY - REQUIREMENTS AND DEPOSITION METHODS
Authors: GRANNEMAN EHA
Citation: Eha. Granneman, THIN-FILMS IN THE INTEGRATED-CIRCUIT INDUSTRY - REQUIREMENTS AND DEPOSITION METHODS, Thin solid films, 228(1-2), 1993, pp. 1-11
Risultati: 1-11 |