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Results: 1-10 |
Results: 10
PHOTOSENSITIVITY OF LEAD GERMANATE GLASS WAVE-GUIDES GROWN BY PULSED-LASER DEPOSITION
Authors: MAILIS S ANDERSON AA BARRINGTON SJ BROCKLESBY WS GREEF R RUTT HN EASON RW
Citation: S. Mailis et al., PHOTOSENSITIVITY OF LEAD GERMANATE GLASS WAVE-GUIDES GROWN BY PULSED-LASER DEPOSITION, Optics letters, 23(22), 1998, pp. 1751-1753
AN ELECTROCHEMICAL AND ELLIPSOMETRIC STUDY OF OXIDE-GROWTH ON SILICONDURING ANODIC ETCHING IN FLUORIDE SOLUTIONS
Authors: BAILES M BOHM S PETER LM RILEY DJ GREEF R
Citation: M. Bailes et al., AN ELECTROCHEMICAL AND ELLIPSOMETRIC STUDY OF OXIDE-GROWTH ON SILICONDURING ANODIC ETCHING IN FLUORIDE SOLUTIONS, Electrochimica acta, 43(12-13), 1998, pp. 1757-1772
HIGH-ASPECT-RATIO SILICON PILLARS FABRICATED BY ELECTROCHEMICAL ETCHING AND OXIDATION OF MACROPOROUS SILICON
Authors: LAU HW PARKER GJ GREEF R
Citation: Hw. Lau et al., HIGH-ASPECT-RATIO SILICON PILLARS FABRICATED BY ELECTROCHEMICAL ETCHING AND OXIDATION OF MACROPOROUS SILICON, Thin solid films, 276(1-2), 1996, pp. 29-31
CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS
Authors: LYNCH S GREEF R STOEMENOS J DARTNELL NJ LLOYD NS KERN P STUCK R CREAN GM
Citation: S. Lynch et al., CHARACTERIZATION OF SEMIINSULATING POLYSILICON OXYGEN DOPED SILICON THIN-FILMS, Materials science and technology, 11(1), 1995, pp. 80-84
REACTIVE ION ETCHING OF SILICON-CARBIDE (SIXC1-X)
Authors: DARTNELL NJ FLOWERS MC GREEF R ZHU J BLACKBURN A
Citation: Nj. Dartnell et al., REACTIVE ION ETCHING OF SILICON-CARBIDE (SIXC1-X), Vacuum, 46(4), 1995, pp. 349-355
HIGH-ASPECT-RATIO SUBMICRON SILICON PILLARS FABRICATED BY PHOTOASSISTED ELECTROCHEMICAL ETCHING AND OXIDATION
Authors: LAU HW PARKER GJ GREEF R HOLLING M
Citation: Hw. Lau et al., HIGH-ASPECT-RATIO SUBMICRON SILICON PILLARS FABRICATED BY PHOTOASSISTED ELECTROCHEMICAL ETCHING AND OXIDATION, Applied physics letters, 67(13), 1995, pp. 1877-1879
ELLIPSOMETRY IN ELECTROCHEMISTRY - A SPECTRUM OF APPLICATIONS
Authors: GREEF R
Citation: R. Greef, ELLIPSOMETRY IN ELECTROCHEMISTRY - A SPECTRUM OF APPLICATIONS, Thin solid films, 233(1-2), 1993, pp. 32-39
IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES
Authors: PICKERING C CARLINE RT ROBBINS DJ LEONG WY GRAY DE GREEF R
Citation: C. Pickering et al., IN-SITU DUAL-WAVELENGTH AND EX-SITU SPECTROSCOPIC ELLIPSOMETRY STUDIES OF STRAINED SIGE EPITAXIAL LAYERS AND MULTIQUANTUM-WELL STRUCTURES, Thin solid films, 233(1-2), 1993, pp. 126-130
CHARACTERIZATION OF SILICON-ON-INSULATOR MULTILAYERS USING EX-SITU SPECTROSCOPIC ELLIPSOMETRY AND IN-SITU MONOCHROMATIC ELLIPSOMETRY DURINGPLASMA-ETCHING
Authors: GREEF R GRAY DE DARTNELL NJ ZHU J LYNCH S CREAN GM
Citation: R. Greef et al., CHARACTERIZATION OF SILICON-ON-INSULATOR MULTILAYERS USING EX-SITU SPECTROSCOPIC ELLIPSOMETRY AND IN-SITU MONOCHROMATIC ELLIPSOMETRY DURINGPLASMA-ETCHING, Thin solid films, 233(1-2), 1993, pp. 214-217
ELECTROCHEMICAL AND OPTICAL STUDIES OF SILICON DISSOLUTION IN AMMONIUM FLUORIDE SOLUTIONS
Authors: BLACKWOOD DJ BORAZIO A GREEF R PETER LM STUMPER J
Citation: Dj. Blackwood et al., ELECTROCHEMICAL AND OPTICAL STUDIES OF SILICON DISSOLUTION IN AMMONIUM FLUORIDE SOLUTIONS, Electrochimica acta, 37(5), 1992, pp. 889-896
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