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Results: 1-10 |
Results: 10
CHIP-SCALE MODULES FOR HIGH-LEVEL INTEGRATION IN THE 21ST-CENTURY
Authors: GREGUS JA LAU MY DEGANI Y TAI KL
Citation: Ja. Gregus et al., CHIP-SCALE MODULES FOR HIGH-LEVEL INTEGRATION IN THE 21ST-CENTURY, Bell Labs technical journal, 3(3), 1998, pp. 116-124
INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS
Authors: AYDIL ES QUINIOU BOM LEE JTC GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., INCIDENCE ANGLE DISTRIBUTIONS OF IONS BOMBARDING GROUNDED SURFACES INHIGH-DENSITY PLASMA REACTORS, Solid-state electronics, 42(5), 1998, pp. 75-82
SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995)
Authors: BAILEY AD VANDESANDEN MCM GREGUS JA GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 373-373
SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE
Authors: BAILEY AD VANDESANDEN MCM GREGUS JA GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 92-104
REAL-TIME LATENT IMAGE MONITORING DURING HOLOGRAPHIC FABRICATION OF SUBMICRON DIFFRACTION GRATINGS
Authors: GREGUS JA GREEN CA YOON E OSTERMAYER FW HAYES TR PAWELEK R GOTTSCHO RA SOHAIL S NAQVI H
Citation: Ja. Gregus et al., REAL-TIME LATENT IMAGE MONITORING DURING HOLOGRAPHIC FABRICATION OF SUBMICRON DIFFRACTION GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2468-2472
MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS
Authors: AYDIL ES GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2883-2892
LOW-TEMPERATURE PLASMA-ETCHING OF GAAS, ALGAAS, AND ALAS
Authors: GREGUS JA VERNON MF GOTTSCHO RA SCHELLER GR HOBSON WS OPILA RL YOON E
Citation: Ja. Gregus et al., LOW-TEMPERATURE PLASMA-ETCHING OF GAAS, ALGAAS, AND ALAS, Plasma chemistry and plasma processing, 13(3), 1993, pp. 521-537
ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR FOR CRYOGENIC ETCHING
Authors: AYDIL ES GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR FOR CRYOGENIC ETCHING, Review of scientific instruments, 64(12), 1993, pp. 3572-3584
REAL-TIME, INSITU MONITORING OF SURFACE-REACTIONS DURING PLASMA PASSIVATION OF GAAS
Authors: AYDIL ES ZHOU Z GIAPIS KP CHABAL Y GREGUS JA GOTTSCHO RA
Citation: Es. Aydil et al., REAL-TIME, INSITU MONITORING OF SURFACE-REACTIONS DURING PLASMA PASSIVATION OF GAAS, Applied physics letters, 62(24), 1993, pp. 3156-3158
CONTROL OF AN UNSTABLE ELECTRON-CYCLOTRON RESONANCE PLASMA
Authors: JARNYK MA GREGUS JA AYDIL ES GOTTSCHO RA
Citation: Ma. Jarnyk et al., CONTROL OF AN UNSTABLE ELECTRON-CYCLOTRON RESONANCE PLASMA, Applied physics letters, 62(17), 1993, pp. 2039-2041
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