Authors:
BAILEY AD
VANDESANDEN MCM
GREGUS JA
GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE (VOL 13, PG 92, 1995), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(2), 1997, pp. 373-373
Authors:
BAILEY AD
VANDESANDEN MCM
GREGUS JA
GOTTSCHO RA
Citation: Ad. Bailey et al., SCALING OF SI AND GAAS TRENCH ETCH RATES WITH ASPECT RATIO, FEATURE WIDTH, AND SUBSTRATE-TEMPERATURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 92-104
Authors:
GREGUS JA
GREEN CA
YOON E
OSTERMAYER FW
HAYES TR
PAWELEK R
GOTTSCHO RA
SOHAIL S
NAQVI H
Citation: Ja. Gregus et al., REAL-TIME LATENT IMAGE MONITORING DURING HOLOGRAPHIC FABRICATION OF SUBMICRON DIFFRACTION GRATINGS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2468-2472
Citation: Es. Aydil et al., MULTIPLE STEADY-STATES IN ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTORS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(6), 1993, pp. 2883-2892
Authors:
GREGUS JA
VERNON MF
GOTTSCHO RA
SCHELLER GR
HOBSON WS
OPILA RL
YOON E
Citation: Ja. Gregus et al., LOW-TEMPERATURE PLASMA-ETCHING OF GAAS, ALGAAS, AND ALAS, Plasma chemistry and plasma processing, 13(3), 1993, pp. 521-537
Citation: Es. Aydil et al., ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR FOR CRYOGENIC ETCHING, Review of scientific instruments, 64(12), 1993, pp. 3572-3584
Authors:
AYDIL ES
ZHOU Z
GIAPIS KP
CHABAL Y
GREGUS JA
GOTTSCHO RA
Citation: Es. Aydil et al., REAL-TIME, INSITU MONITORING OF SURFACE-REACTIONS DURING PLASMA PASSIVATION OF GAAS, Applied physics letters, 62(24), 1993, pp. 3156-3158