Authors:
LAMBERT B
ROUILLARD Y
TOUDIC Y
COQUILLE R
GUENAIS B
GAUNEAU M
DEFARS JP
DEVEAUD B
Citation: B. Lambert et al., FEASIBILITY OF 1.5 MU-M STAIRCASE SOLID-STATE PHOTOMULTIPLIERS IN THEALGASB GAINASSB SYSTEM/, Semiconductor science and technology, 11(2), 1996, pp. 226-230
Authors:
GUIVARCH A
LECORRE A
AUVRAY P
GUENAIS B
CAULET J
BALLINI Y
GUERIN R
DEPUTIER S
LECLANCHE MC
JEZEQUEL G
LEPINE B
QUEMERAIS A
SEBILLEAU D
Citation: A. Guivarch et al., GROWTH BY MOLECULAR-BEAM EPITAXY OF (RARE-EARTH GROUP-V ELEMENT) III-V SEMICONDUCTOR HETEROSTRUCTURES, Journal of materials research, 10(8), 1995, pp. 1942-1952
Authors:
GUIVARCH A
BALLINI Y
TOUDIC Y
MINIER M
AUVRAY P
GUENAIS B
CAULET J
LEMERDY B
LAMBERT B
REGRENY A
Citation: A. Guivarch et al., ERSB GASB(001) AND GASB/ERSB/GASB(001) HETEROSTRUCTURES AND [ERSB,GASB] SUPERLATTICES - MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION/, Journal of applied physics, 75(6), 1994, pp. 2876-2883
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
BAUDET M
GUENAIS B
DEVEAUD B
VALIENTE I
SIMON JC
Citation: B. Lambert et al., HIGH REFLECTIVITY 1.55 MU-M (AL)GASB ALSB BRAGG MIRROR GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 64(6), 1994, pp. 690-691
Authors:
LAMBERT B
TOUDIC Y
ROUILLARD Y
BAUDET M
GUENAIS B
DEVEAUD B
VALIENTE I
SIMON JC
Citation: B. Lambert et al., OPTICAL-PROPERTIES OF GASB-ALSB HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 21(2-3), 1993, pp. 185-188
Authors:
GUIVARCH A
GUENAIS B
BALLINI Y
AUVRAY P
CAULET J
MINIER M
DUPAS G
ROPARS G
REGRENY A
GUERIN R
DEPUTIER S
Citation: A. Guivarch et al., EPITAXIAL-GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED GAAS SCX(YB,ER)1-XAS/GAAS HETEROSTRUCTURES AND [SC0.2YB0.8AS, SC0.3ER0.7AS] SUPERLATTICES/, Journal of crystal growth, 127(1-4), 1993, pp. 638-642