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Results: 1-11 |
Results: 11
ELECTRONIC-PROPERTIES OF ARSENIC-DOPED GALLIUM NITRIDE
Authors: GUIDO LJ MITEV P GHERASIMOVA M GAFFEY B
Citation: Lj. Guido et al., ELECTRONIC-PROPERTIES OF ARSENIC-DOPED GALLIUM NITRIDE, Applied physics letters, 72(16), 1998, pp. 2005-2007
ATOMIC-FORCE MICROSCOPY STUDY OF ELECTRON-BEAM WRITTEN CONTAMINATION STRUCTURES
Authors: AMMAN M SLEIGHT JW LOMBARDI DR WELSER RE DESHPANDE MR REED MA GUIDO LJ
Citation: M. Amman et al., ATOMIC-FORCE MICROSCOPY STUDY OF ELECTRON-BEAM WRITTEN CONTAMINATION STRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 54-62
EVIDENCE OF 2-SPECIES NUCLEATION OF INAS ISLANDS ON (100)GAAS AND (111)B-GAAS SUBSTRATES
Authors: WELSER RE GUIDO LJ
Citation: Re. Welser et Lj. Guido, EVIDENCE OF 2-SPECIES NUCLEATION OF INAS ISLANDS ON (100)GAAS AND (111)B-GAAS SUBSTRATES, Applied physics letters, 68(7), 1996, pp. 912-914
(ALXGA1-X)0.65IN0.35AS MONOLITHIC MULTIJUNCTION SOLAR-CELLS
Authors: WELSER RE GUIDO LJ
Citation: Re. Welser et Lj. Guido, (ALXGA1-X)0.65IN0.35AS MONOLITHIC MULTIJUNCTION SOLAR-CELLS, Solar energy materials and solar cells, 36(4), 1995, pp. 349-356
IMPURITY-FREE LAYER DISORDERING IN P-I-N AND N-I-P ALGAAS-GAAS MULTIPLE-QUANTUM-WELL DEVICE STRUCTURES - THE FERMI-LEVEL EFFECT REVISITED
Authors: SESHADRI S GUIDO LJ MITEV P
Citation: S. Seshadri et al., IMPURITY-FREE LAYER DISORDERING IN P-I-N AND N-I-P ALGAAS-GAAS MULTIPLE-QUANTUM-WELL DEVICE STRUCTURES - THE FERMI-LEVEL EFFECT REVISITED, Applied physics letters, 67(4), 1995, pp. 497-499
VISIBLE-WAVELENGTH SURFACE-EMITTING DEVICES WITH A 15-FOLD IMPROVEMENT IN ELECTRICAL-TO-OPTICAL POWER CONVERSION EFFICIENCY
Authors: THOMAS KJ GUIDO LJ BEGGY JC SMITH S BURNHAM RD
Citation: Kj. Thomas et al., VISIBLE-WAVELENGTH SURFACE-EMITTING DEVICES WITH A 15-FOLD IMPROVEMENT IN ELECTRICAL-TO-OPTICAL POWER CONVERSION EFFICIENCY, Applied physics letters, 66(2), 1995, pp. 127-129
CONTROLLED III-V SEMICONDUCTOR CLUSTER NUCLEATION AND EPITAXIAL-GROWTH VIA ELECTRON-BEAM LITHOGRAPHY
Authors: SLEIGHT JW WELSER RE GUIDO LJ AMMAN M REED MA
Citation: Jw. Sleight et al., CONTROLLED III-V SEMICONDUCTOR CLUSTER NUCLEATION AND EPITAXIAL-GROWTH VIA ELECTRON-BEAM LITHOGRAPHY, Applied physics letters, 66(11), 1995, pp. 1343-1345
AN ARRAY OF DISLOCATIONS IN A STRAINED EPITAXIAL LAYER .1. ELASTIC ENERGY
Authors: ZHANG TY HACK JE GUIDO LJ
Citation: Ty. Zhang et al., AN ARRAY OF DISLOCATIONS IN A STRAINED EPITAXIAL LAYER .1. ELASTIC ENERGY, Journal of applied physics, 75(5), 1994, pp. 2358-2362
AN ARRAY OF DISLOCATIONS IN A STRAINED EPITAXIAL LAYER .2. WORK-HARDENING
Authors: ZHANG TY HACK JE GUIDO LJ
Citation: Ty. Zhang et al., AN ARRAY OF DISLOCATIONS IN A STRAINED EPITAXIAL LAYER .2. WORK-HARDENING, Journal of applied physics, 75(5), 1994, pp. 2363-2366
MAGNITUDE OF THE PIEZOELECTRIC FIELD IN (111)B INYGA1-YAS STRAINED-LAYER QUANTUM-WELLS
Authors: MOISE TS GUIDO LJ BARKER RC
Citation: Ts. Moise et al., MAGNITUDE OF THE PIEZOELECTRIC FIELD IN (111)B INYGA1-YAS STRAINED-LAYER QUANTUM-WELLS, Journal of applied physics, 74(7), 1993, pp. 4681-4684
MAGNITUDE, ORIGIN, AND EVOLUTION OF PIEZOELECTRIC OPTICAL NONLINEARITIES IN STRAINED [111]B INGAAS GAAS QUANTUM-WELLS
Authors: CARTWRIGHT AN MCCALLUM DS BOGGESS TF SMIRL AL MOISE TS GUIDO LJ BARKER RC WHERRETT BS
Citation: An. Cartwright et al., MAGNITUDE, ORIGIN, AND EVOLUTION OF PIEZOELECTRIC OPTICAL NONLINEARITIES IN STRAINED [111]B INGAAS GAAS QUANTUM-WELLS, Journal of applied physics, 73(11), 1993, pp. 7767-7774
Risultati: 1-11 |