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Results: 1-3 |
Results: 3
DYNAMIC ANNEALING OF DAMAGE IN AR-IMPLANTED GAAS CRYSTALS()
Authors: KUTAS AA KOVYAZINA TV AKIMOV AN GUSAKOV GA KOMAROV FF NOVIKOV AP VLASUKOVA LA
Citation: Aa. Kutas et al., DYNAMIC ANNEALING OF DAMAGE IN AR-IMPLANTED GAAS CRYSTALS(), Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 32-35
TEMPERATURE-DEPENDENCE OF THE CRITICAL DOSE OF DEFECTS FOR THE TRANSITION OF SILICON TO THE AMORPHOUS STATE AS A RESULT OF ION-IMPLANTATION
Authors: GUSAKOV GA NOVIKOV AP ANISHCHIK VM
Citation: Ga. Gusakov et al., TEMPERATURE-DEPENDENCE OF THE CRITICAL DOSE OF DEFECTS FOR THE TRANSITION OF SILICON TO THE AMORPHOUS STATE AS A RESULT OF ION-IMPLANTATION, Semiconductors, 28(9), 1994, pp. 931-934
ION-INDUCED ANNEALING OF DAMAGE IN GAAS IMPLANTED WITH ARGON IONS
Authors: AKIMOV AN VLASUKOVA LA GUSAKOV GA KOMAROV FF KUTAS AA NOVIKOV AP
Citation: An. Akimov et al., ION-INDUCED ANNEALING OF DAMAGE IN GAAS IMPLANTED WITH ARGON IONS, Radiation effects and defects in solids, 129(3-4), 1994, pp. 147-154
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