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Results:
1-12
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Results: 12
Authors:
HUGHSON DL
GUTJAHR A
Citation: Dl. Hughson et A. Gutjahr, EFFECT OF CONDITIONING RANDOMLY HETEROGENEOUS TRANSMISSIVITY ON TEMPORAL HYDRAULIC-HEAD MEASUREMENTS IN TRANSIENT 2-DIMENSIONAL AQUIFER FLOW, Stochastic hydrology and hydraulics, 12(3), 1998, pp. 155-170
Authors:
GUTJAHR A
Citation: A. Gutjahr, COMMENTS ON GENERAL JOINT CONDITIONAL SIMULATIONS USING A FAST FOURIER-TRANSFORM METHOD BY GUTJAHR,ALLAN, BULLARD,BRYAN, AND HATCH,SEAN - REPLY TO COMMENTS BY CARR,JAMES,R, Mathematical geology, 30(7), 1998, pp. 939-940
Authors:
GUTJAHR A
BULLARD B
HATCH S
Citation: A. Gutjahr et al., GENERAL JOINT CONDITIONAL SIMULATIONS USING A FAST FOURIER-TRANSFORM METHOD, Mathematical geology, 29(3), 1997, pp. 361-389
Authors:
SILIER I
GUTJAHR A
BANHART F
KONUMA M
BAUSER E
SCHOLLKOPF V
FREY H
Citation: I. Silier et al., GROWTH OF MULTI-CRYSTALLINE SILICON ON SEEDED GLASS FROM METALLIC SOLUTIONS, Materials letters, 28(1-3), 1996, pp. 87-91
Authors:
KONUMA M
SILIER I
GUTJAHR A
HANSSON PO
CRISTIANI G
CZECH E
BAUSER E
BANHART F
Citation: M. Konuma et al., CENTRIFUGAL TECHNIQUES FOR SOLUTION GROWTH OF SEMICONDUCTOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 234-238
Authors:
SILIER I
GUTJAHR A
NAGEL N
HANSSON PO
CZECH E
KONUMA M
BAUSER E
BANHART F
KOHLER R
RAIDT H
JENICHEN B
Citation: I. Silier et al., SOLUTION GROWTH OF EPITAXIAL SEMICONDUCTOR-ON-INSULATOR LAYERS, Journal of crystal growth, 166(1-4), 1996, pp. 727-730
Authors:
GUTJAHR A
DABRINGHAUS H
LACMANN R
Citation: A. Gutjahr et al., STUDIES OF THE GROWTH AND DISSOLUTION KINETICS OF THE CACO3 POLYMORPHS CALCITE AND ARAGONITE .1. GROWTH AND DISSOLUTION RATES IN WATER, Journal of crystal growth, 158(3), 1996, pp. 296-309
Authors:
GUTJAHR A
DABRINGHAUS H
LACMANN R
Citation: A. Gutjahr et al., STUDIES OF THE GROWTH AND DISSOLUTION KINETICS OF THE CACO3 POLYMORPHS CALCITE AND ARAGONITE .2. THE INFLUENCE OF DIVALENT-CATION ADDITIVESON THE GROWTH AND DISSOLUTION RATES, Journal of crystal growth, 158(3), 1996, pp. 310-315
Authors:
RAIDT H
KOHLER R
BANHART F
JENICHEN B
GUTJAHR A
KONUMA M
SILIER I
BAUSER E
Citation: H. Raidt et al., ADHESION IN GROWTH OF DEFECT-FREE SILICON OVER SILICON-OXIDE, Journal of applied physics, 80(7), 1996, pp. 4101-4107
Authors:
BANHART F
GUTJAHR A
Citation: F. Banhart et A. Gutjahr, STRESS-RELAXATION IN SIGE LAYERS GROWN ON OXIDE-PATTERNED SI SUBSTRATES, Journal of applied physics, 80(11), 1996, pp. 6223-6228
Authors:
JONE WB
GONDALIA P
GUTJAHR A
Citation: Wb. Jone et al., REALIZING A HIGH MEASURE OF CONFIDENCE FOR DEFECT LEVEL ANALYSIS OF RANDOM TESTING, IEEE transactions on very large scale integration (VLSI) systems, 3(3), 1995, pp. 446-450
Authors:
GUTJAHR A
BULLARD B
HATCH S
HUGHSON L
Citation: A. Gutjahr et al., JOINT CONDITIONAL SIMULATIONS AND THE SPECTRAL APPROACH FOR FLOW MODELING, Stochastic hydrology and hydraulics, 8(1), 1994, pp. 79-108
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