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Authors: BAUME P GUTOWSKI J KURTZ E HOMMEL D LANDWEHR G
Citation: P. Baume et al., INTENSITY-DEPENDENT ENERGY AND LINESHAPE VARIATION OF DONOR-ACCEPTOR-PAIR BANDS IN HIGHLY COMPENSATED ZNSE-N, Journal of crystal growth, 159(1-4), 1996, pp. 252-256

Authors: DIESSEL A EBELING W GUTOWSKI J JOBST B SCHULL K HOMMEL D PEREIRA MF GULDNER H HENNEBERGER K
Citation: A. Diessel et al., BLEACHING OF EXCITONIC ABSORPTION IN II-VI LASER-DIODES UNDER LASING CONDITIONS, Journal of crystal growth, 159(1-4), 1996, pp. 661-666

Authors: WUNDKE K NEUKIRCH U KUBACKI F GUTOWSKI J HOMMEL D
Citation: K. Wundke et al., PROPAGATION OF EXCITON POLARITONS IN ZNSE ZNSXSE1-X/, Journal of crystal growth, 159(1-4), 1996, pp. 800-804

Authors: EBELING W RYVKIN BS GUTOWSKI J SCHULL K JOBST B HOMMEL D
Citation: W. Ebeling et al., MODULATOR AND SATURABLE ABSORBER FOR INTEGRATION WITH CDZNSE ZNSE/ZNMGSSE QW-LASER DIODES/, Journal of crystal growth, 159(1-4), 1996, pp. 893-897

Authors: SCHMOLKE R SCHOLL E NAGELE M GUTOWSKI J
Citation: R. Schmolke et al., IMPURITY-RELATED DYNAMICAL OPTICAL SWITCHING IN CDS, Physica status solidi. b, Basic research, 188(2), 1995, pp. 843-861

Authors: WECKENDRUP D SASCHEK M NEUKIRCH U GUTOWSKI J FERREIRA SO SITTER H
Citation: D. Weckendrup et al., PHASE RELAXATION OF EXCITONS IN ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM-WELLSTRUCTURES/, Physica status solidi. b, Basic research, 188(1), 1995, pp. 507-513

Authors: GUTOWSKI J DIESSEL A NEUKIRCH U WECKENDRUP D BEHR T JOBST B HOMMEL D
Citation: J. Gutowski et al., EXCITON DYNAMICS AND GAIN MECHANISMS IN OPTICALLY PUMPED ZNSE-BASED LASER STRUCTURES, Physica status solidi. b, Basic research, 187(2), 1995, pp. 423-434

Authors: SCHMOLKE R SCHOLL E NAGELE M GUTOWSKI J
Citation: R. Schmolke et al., NONLINEAR DYNAMICS OF OPTICAL SWITCHING FRONTS IN CDS, Physica status solidi. b, Basic research, 187(2), 1995, pp. 631-648

Authors: DIESSEL A EBELING W GUTOWSKI J JOBST B SCHULL K HOMMEL D HENNEBERGER K
Citation: A. Diessel et al., BLEACHING OF EXCITONS IN A (ZN,CD)SE ZN(S,SE)/(ZN,MG)(S,SE) LASER-DIODE UNDER LASING CONDITIONS/, Physical review. B, Condensed matter, 52(7), 1995, pp. 4736-4739

Authors: WUNDKE K NEUKIRCH U GUTOWSKI J HOMMEL D FERREIRA S SITTER H
Citation: K. Wundke et al., COHERENT EFFECTS IN NONLINEAR ABSORPTION OF THIN ZNSE LAYERS AND ZN1-XCDXSE ZNSE QUANTUM-WELLS UNDER RESONANT EXCITATION/, Journal of luminescence, 66-7(1-6), 1995, pp. 65-69

Authors: WECKENDRUP D SASCHEK M NEUKIRCH U GUTOWSKI J FERREIRA SO SITTER H
Citation: D. Weckendrup et al., QUANTUM BEATS OF EXCITONS IN ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM-WELL STRUCTURES/, Journal of applied physics, 77(8), 1995, pp. 4145-4147

Authors: BAUME P GUTOWSKI J WIESMANN D HEITZ R HOFFMANN A KURTZ E HOMMEL D LANDWEHR G
Citation: P. Baume et al., INTENSITY-DEPENDENT ENERGY AND LINE-SHAPE VARIATION OF DONOR-ACCEPTOR-PAIR BANDS IN ZNSE-N AT DIFFERENT COMPENSATION LEVELS, Applied physics letters, 67(13), 1995, pp. 1914-1916

Authors: SCHMOLKE R SCHOLL E NAGELE M GUTOWSKI J
Citation: R. Schmolke et al., NONLINEAR-OPTICAL SWITCHING FRONTS IN CDS, Journal of crystal growth, 138(1-4), 1994, pp. 213-218

Authors: BAUME P KUBACKI F GUTOWSKI J
Citation: P. Baume et al., CHARACTERIZATION OF IMPURITIES IN II-VI SEMICONDUCTORS BY TIME-RESOLVED LINESHAPE ANALYSIS OF DONOR-ACCEPTOR PAIR SPECTRA, Journal of crystal growth, 138(1-4), 1994, pp. 266-273

Authors: NAGELE M EBELING W GUTOWSKI J GEYZERS KP HEUKEN M
Citation: M. Nagele et al., NONLINEAR TRANSMISSION DYNAMICS OF ZNSXSE1-X ZNSE AND ZNSXSE1-X/ZNSYSE1-Y (X-GREATER-THAN-Y) WAVE-GUIDE STRUCTURES/, Journal of crystal growth, 138(1-4), 1994, pp. 842-848

Authors: NEUKIRCH U WECKENDRUP D GUTOWSKI J HOMMEL D LANDWEHR G
Citation: U. Neukirch et al., DYNAMICAL PROPERTIES OF EXCITONS IN ZN1-XCDXSE ZNSE QUANTUM-WELLS ANDZN1-XCDXSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 138(1-4), 1994, pp. 861-867

Authors: KUDLEK GH POHL UW FRICKE C HEITZ R HOFFMANN A GUTOWSKI J BROSER I
Citation: Gh. Kudlek et al., ELECTRONIC-STRUCTURE AND DYNAMIC BEHAVIOR OF DIFFERENT BOUND-EXCITON COMPLEXES IN ZNSE BULK CRYSTALS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 325-331

Authors: GUTOWSKI J
Citation: J. Gutowski, OPTICAL-PROPERTIES OF II-VI-EPITAXIAL LAYERS, Semiconductor science and technology, 6(9A), 1991, pp. 51-59

Authors: HINGERL K SITTER H LILJA J KUUSISTO E IMAI K PESSA M KUDLEK G GUTOWSKI J
Citation: K. Hingerl et al., ELECTRICAL AND OPTICAL-PROPERTIES OF LI-DOPED MBE-GROWN P-TYPE ZNSE FILMS, Semiconductor science and technology, 6(9A), 1991, pp. 72-75

Authors: KUDLEK G PRESSER N GUTOWSKI J
Citation: G. Kudlek et al., RESONANT RAMAN-SCATTERING AT BOUND EXCITONS IN ZNSE GAAS EPILAYERS/, Semiconductor science and technology, 6(9A), 1991, pp. 83-89

Authors: KUDLEK G PRESSER N GUTOWSKI J HINGERL K ABRAMOF E SITTER H
Citation: G. Kudlek et al., PHOTOLUMINESCENCE AND EXCITATION SPECTROSCOPY OF ZNTE GAAS EPILAYERS GROWN BY HOT-WALL EPITAXY/, Semiconductor science and technology, 6(9A), 1991, pp. 90-95
Risultati: 1-25 | 26-46 |