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Results: 1-18 |
Results: 18
Ion beam studies of silicon oxidation and oxynitridation
Authors: Schulte, WH Gustafsson, T Garfunkel, E Baumvol, IJR Gusev, EP
Citation: Wh. Schulte et al., Ion beam studies of silicon oxidation and oxynitridation, SPR S MAT S, 46, 2001, pp. 161-191
Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces
Authors: Zhang, X Chabal, YJ Christman, SB Chaban, EE Garfunkel, E
Citation: X. Zhang et al., Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces, J VAC SCI A, 19(4), 2001, pp. 1725-1729
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Authors: Chambers, JJ Busch, BW Schulte, WH Gustafsson, T Garfunkel, E Wang, S Maher, DM Klein, TM Parsons, GN
Citation: Jj. Chambers et al., Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon, APPL SURF S, 181(1-2), 2001, pp. 78-93
Limitations to depth resolution in ion scattering experiments
Authors: Schulte, WH Busch, BW Garfunkel, E Gustafsson, T Schiwietz, G Grande, PL
Citation: Wh. Schulte et al., Limitations to depth resolution in ion scattering experiments, NUCL INST B, 183(1-2), 2001, pp. 16-24
High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
Authors: Gustafsson, T Lu, HC Busch, BW Schulte, WH Garfunkel, E
Citation: T. Gustafsson et al., High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering, NUCL INST B, 183(1-2), 2001, pp. 146-153
High temperature stability in lanthanum and zirconia-based gate dielectrics
Authors: Maria, JP Wicaksana, D Kingon, AI Busch, B Schulte, H Garfunkel, E Gustafsson, T
Citation: Jp. Maria et al., High temperature stability in lanthanum and zirconia-based gate dielectrics, J APPL PHYS, 90(7), 2001, pp. 3476-3482
Stability of HF-etched Si(100) surfaces in oxygen ambient
Authors: Zhang, X Garfunkel, E Chabal, YJ Christman, SB Chaban, EE
Citation: X. Zhang et al., Stability of HF-etched Si(100) surfaces in oxygen ambient, APPL PHYS L, 79(24), 2001, pp. 4051-4053
Interface reactions of high-kappa Y2O3 gate oxides with Si
Authors: Busch, BW Kwo, J Hong, M Mannaerts, JP Sapjeta, BJ Schulte, WH Garfunkel, E Gustafsson, T
Citation: Bw. Busch et al., Interface reactions of high-kappa Y2O3 gate oxides with Si, APPL PHYS L, 79(15), 2001, pp. 2447-2449
The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon
Authors: Lu, HC Gusev, E Yasuda, N Green, M Alers, G Garfunkel, E Gustafsson, T
Citation: Hc. Lu et al., The growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon, APPL SURF S, 166(1-4), 2000, pp. 465-468
Oxygen exchange and transport in thin zirconia films on Si(100)
Authors: Busch, BW Schulte, WH Garfunkel, E Gustafsson, T Qi, W Nieh, R Lee, J
Citation: Bw. Busch et al., Oxygen exchange and transport in thin zirconia films on Si(100), PHYS REV B, 62(20), 2000, pp. R13290-R13293
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
Authors: Chang, JP Green, ML Donnelly, VM Opila, RL Eng, J Sapjeta, J Silverman, PJ Weir, B Lu, HC Gustafsson, T Garfunkel, E
Citation: Jp. Chang et al., Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy, J APPL PHYS, 87(9), 2000, pp. 4449-4455
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
Authors: Lu, HC Gusev, EP Garfunkel, E Busch, BW Gustafsson, T Sorsch, TW Green, ML
Citation: Hc. Lu et al., Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon, J APPL PHYS, 87(3), 2000, pp. 1550-1555
Characterization and production metrology of thin transistor gate oxide films
Authors: Diebold, AC Venables, D Chabal, Y Muller, D Weldon, M Garfunkel, E
Citation: Ac. Diebold et al., Characterization and production metrology of thin transistor gate oxide films, MAT SC S PR, 2(2), 1999, pp. 103-147
Nucleation, growth, and aggregation of gold on polyimide surfaces
Authors: Travaly, Y Zhang, L Zhao, Y Pfeffer, R Uhrich, K Cosandey, F Garfunkel, E Madey, TE
Citation: Y. Travaly et al., Nucleation, growth, and aggregation of gold on polyimide surfaces, J MATER RES, 14(9), 1999, pp. 3673-3683
Silicon oxide decomposition and desorption during the thermal oxidation ofsilicon
Authors: Starodub, D Gusev, EP Garfunkel, E Gustafsson, T
Citation: D. Starodub et al., Silicon oxide decomposition and desorption during the thermal oxidation ofsilicon, SURF REV L, 6(1), 1999, pp. 45-52
Structural properties of thin films of high dielectric constant materials on silicon
Authors: Lu, HC Yasuda, N Garfunkel, E Gustafsson, T Chang, JP Opila, RL Alers, G
Citation: Hc. Lu et al., Structural properties of thin films of high dielectric constant materials on silicon, MICROEL ENG, 48(1-4), 1999, pp. 287-290
Interfacial reaction and thermal stability of Ta2O5/TiN for metal electrode capacitors
Authors: Chang, JP Opila, RL Alers, GB Steigerwald, ML Lu, HC Garfunkel, E Gustafsson, T
Citation: Jp. Chang et al., Interfacial reaction and thermal stability of Ta2O5/TiN for metal electrode capacitors, SOL ST TECH, 42(2), 1999, pp. 43
Nitrous oxide gas phase chemistry during silicon oxynitride film growth
Authors: Gupta, A Toby, S Gusev, EP Lu, HC Li, Y Green, ML Gustafsson, T Garfunkel, E
Citation: A. Gupta et al., Nitrous oxide gas phase chemistry during silicon oxynitride film growth, PROG SURF S, 59(1-4), 1998, pp. 103-115
Risultati: 1-18 |