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Results: 1-25/89
Authors:
Feltin, E
Dalmasso, S
de Mierry, P
Beaumont, B
Lahreche, H
Bouille, A
Haas, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy, JPN J A P 2, 40(7B), 2001, pp. L738-L740
Authors:
Nelson, DK
Yacobson, MA
Kagan, VD
Gil, B
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: Dk. Nelson et al., Electric-field-induced impact ionization of excitons in GaN and GaN/AlGaN quantum wells, PHYS SOL ST, 43(12), 2001, pp. 2321-2327
Authors:
Nelson, D
Gil, B
Jacobson, MA
Kagan, VD
Grandjean, N
Beaumont, B
Massies, J
Gibart, P
Citation: D. Nelson et al., Impact ionization of excitons in an electric field in GaN, J PHYS-COND, 13(32), 2001, pp. 7043-7052
Authors:
Munoz, E
Monroy, E
Pau, JL
Calle, F
Omnes, F
Gibart, P
Citation: E. Munoz et al., III nitrides and UV detection, J PHYS-COND, 13(32), 2001, pp. 7115-7137
Authors:
Hochedez, JF
Bergonzo, P
Castex, MC
Dhez, P
Hainaut, O
Sacchi, M
Alvarez, J
Boyer, H
Deneuville, A
Gibart, P
Guizard, B
Kleider, JP
Lemaire, P
Mer, C
Monroy, E
Munoz, E
Muret, P
Omnes, F
Pau, JL
Ralchenko, V
Tromson, D
Verwichte, E
Vial, JC
Citation: Jf. Hochedez et al., Diamond UV detectors for future solar physics missions, DIAM RELAT, 10(3-7), 2001, pp. 673-680
Authors:
Muret, P
Philippe, A
Monroy, E
Munoz, E
Beaumont, B
Omnes, F
Gibart, P
Citation: P. Muret et al., Deep levels in MOCVD n-type hexagonal gallium nitride studied by high resolution deep level transient spectroscopy, MAT SCI E B, 82(1-3), 2001, pp. 91-94
Authors:
Goodman, SA
Auret, FD
Myburg, G
Legodi, MJ
Gibart, P
Beaumont, B
Citation: Sa. Goodman et al., Deep levels introduced in n-GaN grown by the ELOG technique by high-energyelectron irradiation, MAT SCI E B, 82(1-3), 2001, pp. 95-97
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Laugt, M
Omnes, F
Gibart, P
Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166
Authors:
Lancefield, D
Crawford, A
Beaumont, B
Gibart, P
Heuken, M
Di Forte-Poisson, M
Citation: D. Lancefield et al., Temperature dependent electroluminescence in GaN and IaGaN/GaN LEDs, MAT SCI E B, 82(1-3), 2001, pp. 241-244
Authors:
Beaumont, B
Vennegues, P
Gibart, P
Citation: B. Beaumont et al., Epitaxial lateral overgrowth of GaN, PHYS ST S-B, 227(1), 2001, pp. 1-43
Authors:
Auret, FD
Goodman, SA
Hayes, M
Legodi, MJ
Hullavarad, SS
Friedland, E
Beaumont, B
Gibart, P
Citation: Fd. Auret et al., Electrical characterisation of epitaxially grown n-GaN bombarded with high- and low-energy protons, NUCL INST B, 175, 2001, pp. 292-295
Authors:
Shields, PA
Nicholas, RJ
Peeters, FM
Beaumont, B
Gibart, P
Citation: Pa. Shields et al., Free-carrier effects in gallium nitride epilayers: Valence-band dispersion- art. no. 081203, PHYS REV B, 6408(8), 2001, pp. 1203
Authors:
Monroy, E
Calle, F
Pau, JL
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., Application and performance of GaN based UV detectors, PHYS ST S-A, 185(1), 2001, pp. 91-97
Authors:
Beji, L
El Jani, B
Gibart, P
Citation: L. Beji et al., High quality p(+)-n(+)-GaAs tunnel junction diode grown by atmospheric pressure metalorganic vapour phase epitaxy, PHYS ST S-A, 183(2), 2001, pp. 273-279
Authors:
Lahreche, H
Nataf, G
Feltin, E
Beaumont, B
Gibart, P
Citation: H. Lahreche et al., Growth of GaN on (111) Si: a route towards self-supported GaN, J CRYST GR, 231(3), 2001, pp. 329-334
Authors:
Monroy, E
Calle, F
Pau, JL
Munoz, E
Omnes, F
Beaumont, B
Gibart, P
Citation: E. Monroy et al., AlGaN-based UV photodetectors, J CRYST GR, 230(3-4), 2001, pp. 537-543
Authors:
Kuball, M
Benyoucef, M
Beaumont, B
Gibart, P
Citation: M. Kuball et al., Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary, J APPL PHYS, 90(7), 2001, pp. 3656-3658
Authors:
Dassonneville, S
Amokrane, A
Sieber, B
Farvacque, JL
Beaumont, B
Gibart, P
Citation: S. Dassonneville et al., Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts, J APPL PHYS, 89(7), 2001, pp. 3736-3743
Authors:
Deleporte, E
Guenaud, C
Voos, M
Beaumont, B
Gibart, P
Citation: E. Deleporte et al., Strain state in GaN epilayers from optical experiments, J APPL PHYS, 89(2), 2001, pp. 1116-1119
Authors:
Dassonneville, S
Amokrane, A
Sieber, B
Farvacque, JL
Beaumont, B
Gibart, P
Ganiere, JD
Leifer, K
Citation: S. Dassonneville et al., Cathodoluminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate. Time evolution with low energy electron beam, J APPL PHYS, 89(12), 2001, pp. 7966-7972
Authors:
Hoel, V
Guhel, Y
Boudart, B
Gaquiere, C
De Jaeger, JC
Lahreche, H
Gibart, P
Citation: V. Hoel et al., Static measurements of GaN MESFETs on (111) Si substrates, ELECTR LETT, 37(17), 2001, pp. 1095-1096
Authors:
Kyhm, K
Taylor, RA
Ryan, JF
Aoki, T
Kuwata-Gonokami, M
Beaumont, B
Gibart, P
Citation: K. Kyhm et al., Quantum beats of free and bound excitons in GaN, APPL PHYS L, 79(8), 2001, pp. 1097-1099
Authors:
Feltin, E
Beaumont, B
Laugt, M
de Mierry, P
Vennegues, P
Lahreche, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Authors:
Goodman, SA
Auret, FD
Legodi, MJ
Beaumont, B
Gibart, P
Citation: Sa. Goodman et al., Characterization of electron-irradiated n-GaN, APPL PHYS L, 78(24), 2001, pp. 3815-3817
Authors:
Munoz, E
Monroy, E
Calle, F
Omnes, F
Gibart, P
Citation: E. Munoz et al., AlGaN photodiodes for monitoring solar UV radiation, J GEO RES-A, 105(D4), 2000, pp. 4865-4871