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Results: 1-12 |
Results: 12
The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy
Authors: Vanmil, BL Ptak, AJ Giles, NC Myers, TH Treado, PJ Nelson, MP Ribar, JM Smith, RD
Citation: Bl. Vanmil et al., The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy, J ELEC MAT, 30(6), 2001, pp. 785-788
Sharp-line luminescence and absorption in ZnGeP2
Authors: Rablau, CI Giles, NC
Citation: Ci. Rablau et Nc. Giles, Sharp-line luminescence and absorption in ZnGeP2, J APPL PHYS, 90(7), 2001, pp. 3314-3318
Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy
Authors: Ptak, AJ Holbert, LJ Ting, L Swartz, CH Moldovan, M Giles, NC Myers, TH Van Lierde, P Tian, C Hockett, RA Mitha, S Wickenden, AE Koleske, DD Henry, RL
Citation: Aj. Ptak et al., Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy, APPL PHYS L, 79(17), 2001, pp. 2740-2742
Photoluminescence study of cadmium tungstate crystals
Authors: Chirila, MM Stevens, KT Murphy, HJ Giles, NC
Citation: Mm. Chirila et al., Photoluminescence study of cadmium tungstate crystals, J PHYS CH S, 61(5), 2000, pp. 675-681
Identification of trapping sites for OH- molecular ions in CdWO4
Authors: Chirila, MM Garces, NY Murphy, HJ Wicks, C Grencewicz, K Halliburton, LE Giles, NC
Citation: Mm. Chirila et al., Identification of trapping sites for OH- molecular ions in CdWO4, J PHYS CH S, 61(11), 2000, pp. 1871-1876
Broad-band photoluminescence from ZnGeP2
Authors: Moldovan, M Giles, NC
Citation: M. Moldovan et Nc. Giles, Broad-band photoluminescence from ZnGeP2, J APPL PHYS, 87(10), 2000, pp. 7310-7315
Optical and EPR characterization of point defects in bismuth-doped CdWO4 crystals
Authors: Murphy, HJ Stevens, KT Garces, NY Moldovan, M Giles, NC Halliburton, LE
Citation: Hj. Murphy et al., Optical and EPR characterization of point defects in bismuth-doped CdWO4 crystals, RADIAT EFF, 149(1-4), 1999, pp. 273-278
Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe : Cr2+
Authors: Rablau, CI Ndap, JO Ma, X Burger, A Giles, NC
Citation: Ci. Rablau et al., Absorption and photoluminescence spectroscopy of diffusion-doped ZnSe : Cr2+, J ELEC MAT, 28(6), 1999, pp. 678-682
Characterization of defect-related optical absorption in ZnGeP2
Authors: Setzler, SD Schunemann, PG Pollak, TM Ohmer, MC Goldstein, JT Hopkins, FK Stevens, KT Halliburton, LE Giles, NC
Citation: Sd. Setzler et al., Characterization of defect-related optical absorption in ZnGeP2, J APPL PHYS, 86(12), 1999, pp. 6677-6681
Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers
Authors: Moldovan, M Giles, NC
Citation: M. Moldovan et Nc. Giles, Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers, J APPL PHYS, 85(9), 1999, pp. 6723-6727
Microstructure, dangling bonds and impurities in activated carbons
Authors: Manivannan, A Chirila, M Giles, NC Seehra, MS
Citation: A. Manivannan et al., Microstructure, dangling bonds and impurities in activated carbons, CARBON, 37(11), 1999, pp. 1741-1747
Electron paramagnetic resonance of a cation antisite defect in ZnGeP2
Authors: Setzler, SD Giles, NC Halliburton, LE Schunemann, PG Pollak, TM
Citation: Sd. Setzler et al., Electron paramagnetic resonance of a cation antisite defect in ZnGeP2, APPL PHYS L, 74(9), 1999, pp. 1218-1220
Risultati: 1-12 |