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Results:
1-8
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Results: 8
Authors:
Rodina, AV
Dietrich, M
Goldner, A
Eckey, L
Hoffmann, A
Efros, AL
Rosen, M
Meyer, BK
Citation: Av. Rodina et al., Free excitons in wurtzite GaN - art. no. 115204, PHYS REV B, 6411(11), 2001, pp. 5204
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Kaschner, A
Bechstedt, F
Amano, H
Akasaki, I
Citation: G. Steude et al., Strain modification of GaN in AlGaN/GaN epitaxial films, JPN J A P 2, 38(5A), 1999, pp. L498-L500
Authors:
Goldner, A
Hoffmann, A
Gil, B
Lefebvre, P
Bigenwald, P
Christol, P
Morkoc, H
Citation: A. Goldner et al., Microcalorimetric absorption spectroscopy in GaN-AlGaN quantum wells, MAT SCI E B, 59(1-3), 1999, pp. 319-322
Authors:
Rodina, AV
Dietrich, M
Goldner, A
Eckey, L
Efros, AL
Rosen, M
Hoffmann, A
Meyer, BK
Citation: Av. Rodina et al., Exciton energy structure in wurtzite GaN, PHYS ST S-B, 216(1), 1999, pp. 21-26
Authors:
Meyer, BK
Steude, G
Goldner, A
Hoffmann, A
Amano, H
Akasaki, I
Citation: Bk. Meyer et al., Photoluminescence investigations of AlGaN on GaN epitaxial films, PHYS ST S-B, 216(1), 1999, pp. 187-191
Authors:
Zolotoyabko, E
Goldner, A
Komen, Y
Citation: E. Zolotoyabko et al., Thickness effect in the atomic ordering of strained GaxIn1-xP layers, PHYS REV B, 60(15), 1999, pp. 11014-11025
Authors:
Steude, G
Meyer, BK
Goldner, A
Hoffmann, A
Bertram, F
Christen, J
Amano, H
Akasaki, I
Citation: G. Steude et al., Optical investigations of AlGaN on GaN epitaxial films, APPL PHYS L, 74(17), 1999, pp. 2456-2458
Authors:
Hoffmann, A
Kutzer, V
Goldner, A
Citation: A. Hoffmann et al., Bound excitons in wide-gap II-VI and nitride semiconductors. Comparison ofoptical studies of shallow dopants in these materials, PHYS ST S-B, 210(2), 1998, pp. 327-335
Risultati:
1-8
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