AAAAAA

   
Results: 1-9 |
Results: 9
Empirical pseudopotential band structure of 3C, 4H, and 6H SiC using transferable semiempirical Si and C model potentials - art. no. 045104
Authors: Pennington, G Goldsman, N
Citation: G. Pennington et N. Goldsman, Empirical pseudopotential band structure of 3C, 4H, and 6H SiC using transferable semiempirical Si and C model potentials - art. no. 045104, PHYS REV B, 6404(4), 2001, pp. 5104
Tellurium desorption kinetics from (112) Si: Si-Te binding energy
Authors: Dhar, NK Goldsman, N Wood, CEC
Citation: Nk. Dhar et al., Tellurium desorption kinetics from (112) Si: Si-Te binding energy, PHYS REV B, 61(12), 2000, pp. 8256-8261
Advances in the Spherical Harmonic-Boltzmann-Wigner approach to device simulation
Authors: Goldsman, N Lin, CK Han, ZY Huang, CK
Citation: N. Goldsman et al., Advances in the Spherical Harmonic-Boltzmann-Wigner approach to device simulation, SUPERLATT M, 27(2-3), 2000, pp. 159-175
CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics
Authors: Dhar, NK Boyd, PR Martinka, M Dinan, JH Almeida, LA Goldsman, N
Citation: Nk. Dhar et al., CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics, J ELEC MAT, 29(6), 2000, pp. 748-753
Numerical simulation of small-signal microwave performance of 4H-SIC MESFET
Authors: Huang, MW Mayergoyz, ID Goldsman, N
Citation: Mw. Huang et al., Numerical simulation of small-signal microwave performance of 4H-SIC MESFET, SOL ST ELEC, 44(7), 2000, pp. 1281-1287
Investigation of the optical spot position on the performance of metal-semiconductor-metal structures: novel application
Authors: Safwat, AME Lin, CK Kim, J Johnson, FG Johnson, WB Goldsman, N Lee, C
Citation: Ame. Safwat et al., Investigation of the optical spot position on the performance of metal-semiconductor-metal structures: novel application, SOL ST ELEC, 44(11), 2000, pp. 2077-2080
The realization of scattering matrix approach to transport modeling through spherical harmonics
Authors: Han, ZY Goldsman, N Stettler, MA
Citation: Zy. Han et al., The realization of scattering matrix approach to transport modeling through spherical harmonics, SOL ST ELEC, 43(3), 1999, pp. 493-501
A transient solution of the Boltzmann equation exposes energy overshoot insemiconductor devices
Authors: Lin, CK Goldsman, N Mayergoyz, ID Chang, CH
Citation: Ck. Lin et al., A transient solution of the Boltzmann equation exposes energy overshoot insemiconductor devices, J APPL PHYS, 86(1), 1999, pp. 468-475
Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors
Authors: Wang, W McCarthy, D Park, D Ma, D Marrian, C Peckerar, M Goldsman, N Melngailis, J Berry, IL
Citation: W. Wang et al., Fabrication and characterization of buried subchannel implant n-metal-oxide-semiconductor transistors, J VAC SCI B, 16(6), 1998, pp. 3812-3816
Risultati: 1-9 |