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Results: 1-9 |
Results: 9
Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height
Authors: De Vrieze, A Strubbe, K Gomes, WP Forment, S Van Meirhaeghe, RL
Citation: A. De Vrieze et al., Electrochemical formation and properties of n-GaAs/Au and n-GaAs/Ag Schottky barriers: Influence of surface composition upon the barrier height, PHYS CHEM P, 3(23), 2001, pp. 5297-5303
Photoanodic dissolution of n-InP: An electrochemical impedance study
Authors: Hens, Z Gomes, WP
Citation: Z. Hens et Wp. Gomes, Photoanodic dissolution of n-InP: An electrochemical impedance study, J PHYS CH B, 104(32), 2000, pp. 7725-7734
On the electrochemical impedance of blocking semiconductor vertical bar electrolyte contacts
Authors: Hens, Z Gomes, WP
Citation: Z. Hens et Wp. Gomes, On the electrochemical impedance of blocking semiconductor vertical bar electrolyte contacts, ACH-MODEL C, 137(2-3), 2000, pp. 361-382
Electrochemistry and photoetching of n-GaN
Authors: Huygens, IM Strubbe, K Gomes, WP
Citation: Im. Huygens et al., Electrochemistry and photoetching of n-GaN, J ELCHEM SO, 147(5), 2000, pp. 1797-1802
The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example
Authors: Hens, Z Gomes, WP
Citation: Z. Hens et Wp. Gomes, The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example, J PHYS CH B, 103(1), 1999, pp. 130-138
On the electrochemical impedance of InP and GaAs electrodes in indifferentelectrolyte. Part 1. Analytical description of the frequency dispersion
Authors: Hens, Z Gomes, WP
Citation: Z. Hens et Wp. Gomes, On the electrochemical impedance of InP and GaAs electrodes in indifferentelectrolyte. Part 1. Analytical description of the frequency dispersion, PCCP PHYS C, 1(15), 1999, pp. 3607-3615
On the electrochemical impedance of InP and GaAs electrodes in indifferentelectrolyte. Part 2. Experimental study on the factors influencing the frequency dispersion
Authors: Hens, Z Gomes, WP
Citation: Z. Hens et Wp. Gomes, On the electrochemical impedance of InP and GaAs electrodes in indifferentelectrolyte. Part 2. Experimental study on the factors influencing the frequency dispersion, PCCP PHYS C, 1(15), 1999, pp. 3617-3625
Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkalinehypobromite solutions
Authors: Theuwis, A Gomes, WP
Citation: A. Theuwis et Wp. Gomes, Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkalinehypobromite solutions, J ELCHEM SO, 146(5), 1999, pp. 1903-1909
Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed
Authors: Strubbe, K Vereecken, PM Gomes, WP
Citation: K. Strubbe et al., Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed, J ELCHEM SO, 146(4), 1999, pp. 1412-1420
Risultati: 1-9 |