AAAAAA
Results: 26-50/75
Authors:
Reiche, M
Gosele, U
Wiegand, M
Citation: M. Reiche et al., Modification of Si(100)-surfaces by SF6 plasma etching - Application to wafer direct bonding, CRYST RES T, 35(6-7), 2000, pp. 807-821
Authors:
Wang, YC
Scheerschmidt, K
Gosele, U
Citation: Yc. Wang et al., Theoretical investigations of bond properties in graphite and graphitic silicon, PHYS REV B, 61(19), 2000, pp. 12864-12870
Authors:
Leonard, SW
van Driel, HM
Birner, A
Gosele, U
Villeneuve, PR
Citation: Sw. Leonard et al., Single-mode transmission in two-dimensional macroporous silicon photonic crystal waveguides, OPTICS LETT, 25(20), 2000, pp. 1550-1552
Authors:
Muller, F
Birner, A
Schilling, J
Gosele, U
Kettner, C
Hanggi, P
Citation: F. Muller et al., Membranes for micropumps from macroporous silicon, PHYS ST S-A, 182(1), 2000, pp. 585-590
Authors:
Gosele, U
Citation: U. Gosele, Solid-state physics - Surprising movements in solids, NATURE, 408(6808), 2000, pp. 38-39
Authors:
Reiche, M
Wiegand, M
Gosele, U
Citation: M. Reiche et al., Infrared spectroscopic analysis of plasma-treated Si(100)-surfaces, MIKROCH ACT, 133(1-4), 2000, pp. 35-43
Authors:
Kastner, G
Gosele, U
Citation: G. Kastner et U. Gosele, Principles of strain relaxation in heteroepitaxial films growing on compliant substrates, J APPL PHYS, 88(7), 2000, pp. 4048-4055
Authors:
Scholz, RF
Werner, P
Gosele, U
Engler, N
Leipner, HS
Citation: Rf. Scholz et al., Determination of arsenic diffusion parameters by sulfur indiffusion in gallium arsenide, J APPL PHYS, 88(12), 2000, pp. 7045-7050
Authors:
Koitzsch, C
Conrad, D
Scheerschmidt, K
Gosele, U
Citation: C. Koitzsch et al., Empirical molecular dynamic study of SiC(0001) surface reconstructions andbonded interfaces, J APPL PHYS, 88(12), 2000, pp. 7104-7109
Authors:
Lee, HN
Visinoiu, A
Senz, S
Harnagea, C
Pignolet, A
Hesse, D
Gosele, U
Citation: Hn. Lee et al., Structural and electrical anisotropy of (001)-, (116)-, and (103)-orientedepitaxial SrBi2Ta2O9 thin films on SrTiO3 substrates grown by pulsed laserdeposition, J APPL PHYS, 88(11), 2000, pp. 6658-6664
Authors:
James, AR
Pignolet, A
Hesse, D
Gosele, U
Citation: Ar. James et al., Structural and electrical characterization of epitaxial, large area ferroelectric films of Ba2Bi4Ti5O18 grown by pulsed excimer laser ablation, J APPL PHYS, 87(6), 2000, pp. 2825-2829
Authors:
Scholz, RF
Gosele, U
Citation: Rf. Scholz et U. Gosele, Phosphorus and antimony in GaAs as tracers for self-diffusion on the arsenic sublattice, J APPL PHYS, 87(2), 2000, pp. 704-710
Authors:
Alexe, M
Dragoi, V
Reiche, M
Gosele, U
Citation: M. Alexe et al., Low temperature GaAs/Si direct wafer bonding, ELECTR LETT, 36(7), 2000, pp. 677-678
Authors:
Wiegand, M
Reiche, M
Gosele, U
Citation: M. Wiegand et al., Time-dependent surface properties and wafer bonding of O-2-plasma-treated sillicon (100) surfaces, J ELCHEM SO, 147(7), 2000, pp. 2734-2740
Authors:
Lee, HN
Senz, S
Zakharov, ND
Harnagea, C
Pignolet, A
Hesse, D
Gosele, U
Citation: Hn. Lee et al., Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100), APPL PHYS L, 77(20), 2000, pp. 3260-3262
Authors:
Wakayama, Y
Gerth, G
Werner, P
Gosele, U
Sokolov, LV
Citation: Y. Wakayama et al., Structural transition of Ge dots induced by submonolayer carbon on Ge wetting layer, APPL PHYS L, 77(15), 2000, pp. 2328-2330
Authors:
Conrad, D
Scheerschmidt, K
Gosele, U
Citation: D. Conrad et al., On the possibility of diamond wafer bonding in ultrahigh vacuum, APPL PHYS L, 77(1), 2000, pp. 49-51
Authors:
Kogler, R
Peeva, A
Anwand, W
Brauer, G
Skorupa, W
Werner, P
Gosele, U
Citation: R. Kogler et al., Reply to "Comment on 'Interstitial-type defects away of the projected ion range in high energy ion implanted and annealed silicon' " [Appl. Phys. Lett. 77, 151 (2000)], APPL PHYS L, 77(1), 2000, pp. 153-153
Authors:
Senz, S
Kastner, G
Gosele, U
Gottschalch, V
Citation: S. Senz et al., Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate, APPL PHYS L, 76(6), 2000, pp. 703-705
Authors:
Zakharov, ND
Werner, P
Gosele, U
Heitz, R
Bimberg, D
Ledentsov, NN
Ustinov, VM
Volovik, BV
Alferov, ZI
Polyakov, NK
Petrov, VN
Egorov, VA
Cirlin, GE
Citation: Nd. Zakharov et al., Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate, APPL PHYS L, 76(19), 2000, pp. 2677-2679
Authors:
Harnagea, C
Pignolet, A
Alexe, M
Satyalakshmi, KM
Hesse, D
Gosele, U
Citation: C. Harnagea et al., Nanoscale switching and domain structure of ferroelectric BaBi4Ti4O15 thinfilms, JPN J A P 2, 38(11A), 1999, pp. L1255-L1257
Authors:
Huang, LJ
Tong, QY
Gosele, U
Citation: Lj. Huang et al., Hydrogen-implantation induced blistering and layer transfer of LaAlO3 and sapphire, EL SOLID ST, 2(5), 1999, pp. 238-239
Authors:
Alexe, M
Senz, S
Pignolet, A
Hesse, D
Gosele, U
Citation: M. Alexe et al., Direct wafer bonding and layer transfer for ferroelectric thin film integration, INTEGR FERR, 27(1-4), 1999, pp. 1249-1255
Authors:
Pignolet, A
Satyalakshmi, KM
Alexe, M
Zakharov, ND
Harnagea, C
Senz, S
Hesse, D
Gosele, U
Citation: A. Pignolet et al., Epitaxial bismuth-layer-structured perovskite ferroelectric thin films grown by pulsed laser deposition, INTEGR FERR, 26(1-4), 1999, pp. 723-731
Authors:
Li, AP
Muller, F
Birner, A
Nielsch, K
Gosele, U
Citation: Ap. Li et al., Fabrication and microstructuring of hexagonally ordered two-dimensional nanopore arrays in anodic alumina, ADVAN MATER, 11(6), 1999, pp. 483