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Results:
1-13
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Results: 13
Authors:
Rouillard, Y
Genty, F
Perona, A
Vicet, A
Yarekha, DA
Boissier, G
Grech, P
Baranov, AN
Alibert, C
Citation: Y. Rouillard et al., Edge and vertical surface emitting lasers around 2.0-2.5 mu m and their applications, PHI T ROY A, 359(1780), 2001, pp. 581-597
Authors:
Wilk, A
Fraisse, B
Christol, P
Boissier, G
Grech, P
El Gazouli, M
Rouillard, Y
Baranov, AN
Joullie, A
Citation: A. Wilk et al., MBE growth of InAs/InAsSb/InAlAsSb "W" quantum well laser diodes emitting near 3 mu m, J CRYST GR, 227, 2001, pp. 586-590
Authors:
Wilk, A
Genty, F
Fraisse, B
Boissier, G
Grech, P
El Gazouli, M
Christol, P
Oswald, J
Simecek, T
Hulicius, E
Joullie, A
Citation: A. Wilk et al., MBE growth of InAs/InAsSb/AlAsSb structures for mid-infrared lasers, J CRYST GR, 223(3), 2001, pp. 341-348
Authors:
Jimenez, L
Ignar, R
D'Aiello, R
Grech, P
Citation: L. Jimenez et al., Use of PCR analysis for sterility testing in pharmaceutical environments, J RAPID M A, 8(1), 2000, pp. 11-20
Authors:
Yarekha, DA
Vicet, A
Perona, A
Glastre, G
Fraisse, B
Rouillard, Y
Skouri, EM
Boissier, G
Grech, P
Joullie, A
Alibert, C
Baranov, AN
Citation: Da. Yarekha et al., High efficiency GaInSbAs/GaSb type-II quantum well continuous wave lasers, SEMIC SCI T, 15(4), 2000, pp. 390-394
Authors:
Yarekha, DA
Glastre, G
Perona, A
Rouillard, Y
Genty, F
Skouri, EM
Boissier, G
Grech, P
Joullie, A
Alibert, C
Baranov, AN
Citation: Da. Yarekha et al., High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wavelasers emitting near 2.3 mu m, ELECTR LETT, 36(6), 2000, pp. 537-539
Authors:
Wilk, A
El Gazouli, M
El Skouri, M
Christol, P
Grech, P
Baranov, AN
Joullie, A
Citation: A. Wilk et al., Type-II InAsSb/InAs strained quantum-well laser diodes emitting at 3.5 mu m, APPL PHYS L, 77(15), 2000, pp. 2298-2300
Authors:
Joullie, A
Skouri, EM
Garcia, M
Grech, P
Wilk, A
Christol, P
Baranov, AN
Behres, A
Kluth, J
Stein, A
Heime, K
Heuken, M
Rushworth, S
Hulicius, E
Simecek, T
Citation: A. Joullie et al., InAs(PSb)-based "W" quantum well laser diodes emitting near 3.3 mu m, APPL PHYS L, 76(18), 2000, pp. 2499-2501
Authors:
Jimenez, L
Ignar, R
Smalls, S
Grech, P
Hamilton, J
Bosko, Y
English, D
Citation: L. Jimenez et al., Molecular detection of bacterial indicators in cosmetic pharmaceuticals and raw materials, J IND MIC B, 22(2), 1999, pp. 93-95
Authors:
Joullie, A
Glastre, G
Blondeau, R
Nicolas, JC
Cuminal, Y
Baranov, AN
Wilk, A
Garcia, M
Grech, P
Alibert, C
Citation: A. Joullie et al., Continuous-wave operation of GaInAsSb-GaSb Type-II quantum-well ridge-lasers, IEEE S T QU, 5(3), 1999, pp. 711-714
Authors:
Cuminal, Y
Baranov, AN
Bec, D
Grech, P
Garcia, M
Boissier, G
Joullie, A
Glastre, G
Blondeau, R
Citation: Y. Cuminal et al., Room-temperature 2.63 mu m GaInAsSb/GaSb strained quantum-well laser diodes, SEMIC SCI T, 14(3), 1999, pp. 283-288
Authors:
Almuneau, G
Genty, F
Wilk, A
Grech, P
Joullie, A
Chusseau, L
Citation: G. Almuneau et al., GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 mu m operation, SEMIC SCI T, 14(1), 1999, pp. 89-92
Authors:
Genty, F
Almuneau, G
Chusseau, L
Wilk, A
Gaillard, S
Boissier, G
Grech, P
Jacquet, J
Citation: F. Genty et al., Growth and characterization of vertical cavity structures on InP with GaAsSb AlAsSb Bragg mirrors for 1.55 mu m emission, J CRYST GR, 202, 1999, pp. 1024-1027
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