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Results:
1-18
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Results: 18
Authors:
Chen, HJ
Feenstra, RM
Northrup, J
Neugebauer, J
Greve, DW
Citation: Hj. Chen et al., Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory, MRS I J N S, 6(11), 2001, pp. NIL_1-NIL_12
Authors:
Greve, DW
Citation: Dw. Greve, Si-Ge-C growth and devices, MAT SCI E B, 87(3), 2001, pp. 271-276
Authors:
Lee, CD
Ramachandran, V
Sagar, A
Feenstra, RM
Greve, DW
Sarney, WL
Salamanca-Riba, L
Look, DC
Bai, S
Choyke, WJ
Devaty, RP
Citation: Cd. Lee et al., Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, J ELEC MAT, 30(3), 2001, pp. 162-169
Authors:
Sarney, WL
Salamanca-Riba, L
Ramachandran, V
Feenstra, RM
Greve, DW
Citation: Wl. Sarney et al., TEM study of the morphology of GaN/SiC (0001) grown at various temperatures by MBE, MRS I J N S, 5, 2000, pp. NIL_204-NIL_209
Authors:
Ramachandran, V
Feenstra, RM
Northrup, JE
Greve, DW
Citation: V. Ramachandran et al., Surface activity of magnesium during GaN molecular beam epitaxial growth, MRS I J N S, 5, 2000, pp. NIL_240-NIL_245
Authors:
Chen, HJ
Feenstra, RM
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
Citation: Hj. Chen et al., Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy, J VAC SCI B, 18(4), 2000, pp. 2284-2289
Authors:
Mocuta, AC
Greve, DW
Citation: Ac. Mocuta et Dw. Greve, Si1-x-yGexCy-channel p-MOSFET's with improved thermal stability, IEEE ELEC D, 21(6), 2000, pp. 292-294
Authors:
Ramachandran, V
Feenstra, RM
Sarney, WL
Salamanca-Riba, L
Greve, DW
Citation: V. Ramachandran et al., Optimized structural properties of wurtzite GaN on SiC(0001) grown by molecular beam epitaxy, J VAC SCI A, 18(4), 2000, pp. 1915-1918
Authors:
Feenstra, RM
Chen, HJ
Ramachandran, V
Lee, CD
Smith, AR
Northrup, JE
Zywietz, T
Neugebauer, J
Greve, DW
Citation: Rm. Feenstra et al., Surface morphology of GaN surfaces during molecular beam epitaxy, SURF REV L, 7(5-6), 2000, pp. 601-606
Authors:
Feenstra, RM
Chen, HJ
Ramachandran, V
Smith, AR
Greve, DW
Citation: Rm. Feenstra et al., Reconstructions of GaN and InGaN surfaces, APPL SURF S, 166(1-4), 2000, pp. 165-172
Authors:
Ramachandran, V
Lee, CD
Feenstra, RM
Smith, AR
Greve, DW
Citation: V. Ramachandran et al., Comment on "Structures of GaN(0001)-(2x2), -(4x4), and -(5x5) surface reconstructions", PHYS REV L, 84(17), 2000, pp. 4014-4014
Authors:
Ramachandran, V
Lee, CD
Feenstra, RM
Smith, AR
Northrup, JE
Greve, DW
Citation: V. Ramachandran et al., Structure of clean and arsenic-covered GaN(0001) surfaces, J CRYST GR, 209(2-3), 2000, pp. 355-363
Authors:
Carley, LR
Bain, JA
Fedder, GK
Greve, DW
Guillou, DF
Lu, MSC
Mukherjee, T
Santhanam, S
Abelmann, L
Min, S
Citation: Lr. Carley et al., Single-chip computers with microelectromechanical systems-based magnetic memory (invited), J APPL PHYS, 87(9), 2000, pp. 6680-6685
Authors:
Mocuta, AC
Greve, DW
Citation: Ac. Mocuta et Dw. Greve, Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition, J VAC SCI A, 17(4), 1999, pp. 1239-1243
Authors:
Ramachandran, V
Smith, AR
Feenstra, RM
Greve, DW
Citation: V. Ramachandran et al., Temperature dependence of molecular beam epitaxy of GaN on SiC (0001), J VAC SCI A, 17(4), 1999, pp. 1289-1293
Authors:
Smith, AR
Feenstra, RM
Greve, DW
Shin, MS
Skowronski, M
Neugebauer, J
Northrup, JE
Citation: Ar. Smith et al., GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations, SURF SCI, 423(1), 1999, pp. 70-84
Authors:
Mocuta, AC
Greve, DW
Citation: Ac. Mocuta et Dw. Greve, Epitaxial Si1-yCy alloys: The role of surface and gas phase reactions, J APPL PHYS, 85(2), 1999, pp. 1240-1242
Authors:
Ramachandran, V
Feenstra, RM
Sarney, WL
Salamanca-Riba, L
Northrup, JE
Romano, LT
Greve, DW
Citation: V. Ramachandran et al., Inversion of wurtzite GaN(0001) by exposure to magnesium, APPL PHYS L, 75(6), 1999, pp. 808-810
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