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Results: 1-13 |
Results: 13
Characterization of profiling techniques for ultralow energy arsenic implants
Authors: Kasnavi, R Sun, Y Mount, G Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of profiling techniques for ultralow energy arsenic implants, EL SOLID ST, 4(1), 2001, pp. G1-G3
Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction
Authors: Wang, HCH Wang, CC Chang, CS Wang, TH Griffin, PB Diaz, CH
Citation: Hch. Wang et al., Interface induced uphill diffusion of boron: An effective approach for ultrashallow junction, IEEE ELEC D, 22(2), 2001, pp. 65-67
Tight-binding model and electronic structure of tetrahedral zirconium silicate
Authors: Jameson, JR Harrison, W Griffin, PB
Citation: Jr. Jameson et al., Tight-binding model and electronic structure of tetrahedral zirconium silicate, J APPL PHYS, 90(9), 2001, pp. 4570-4577
Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation
Authors: Ngau, JL Griffin, PB Plummer, JD
Citation: Jl. Ngau et al., Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation, J APPL PHYS, 90(4), 2001, pp. 1768-1778
Material and process limits in silicon VLSI technology
Authors: Plummer, JD Griffin, PB
Citation: Jd. Plummer et Pb. Griffin, Material and process limits in silicon VLSI technology, P IEEE, 89(3), 2001, pp. 240-258
Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Comment on "Self-diffusion in silicon: Similarity between the properties of native point defects" - Ural, Griffin, and Plummer reply, PHYS REV L, 85(22), 2000, pp. 4836-4836
Characterization of arsenic dose loss at the Si/SiO2 interface
Authors: Kasnavi, R Sun, Y Mo, R Pianetta, P Griffin, PB Plummer, JD
Citation: R. Kasnavi et al., Characterization of arsenic dose loss at the Si/SiO2 interface, J APPL PHYS, 87(5), 2000, pp. 2255-2260
Agta hunting and sustainability of resource use in northeastern Luzon, Philippines
Authors: Griffin, PB Griffin, MB
Citation: Pb. Griffin et Mb. Griffin, Agta hunting and sustainability of resource use in northeastern Luzon, Philippines, BIOL RES MA, 2000, pp. 325-335
Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures, PHYSICA B, 274, 1999, pp. 512-515
Diffuse X-ray streaks from defects and surface features in boron implantedsilicon
Authors: Beck, U Chang, CH Metzger, TH Griffin, PB Patel, JR
Citation: U. Beck et al., Diffuse X-ray streaks from defects and surface features in boron implantedsilicon, PHYS ST S-B, 215(1), 1999, pp. 779-783
Self-diffusion in silicon: Similarity between the properties of native point defects
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Self-diffusion in silicon: Similarity between the properties of native point defects, PHYS REV L, 83(17), 1999, pp. 3454-3457
Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon
Authors: Ural, A Griffin, PB Plummer, JD
Citation: A. Ural et al., Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon, J APPL PHYS, 85(9), 1999, pp. 6440-6446
Influence of process-induced stress on device characteristics and its impact on scaled device performance
Authors: Smeys, P Griffin, PB Rek, ZU De Wolf, I Saraswat, KC
Citation: P. Smeys et al., Influence of process-induced stress on device characteristics and its impact on scaled device performance, IEEE DEVICE, 46(6), 1999, pp. 1245-1252
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