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Results: 1-10 |
Results: 10

Authors: Balkow, S Kersten, A Tran, TTT Stehle, T Grosse, P Museteanu, C Utermohlen, O Pircher, H von Weizsacker, F Wallich, R Mullbacher, A Simon, MM
Citation: S. Balkow et al., Concerted action of the FasL/Fas and perforin/granzyme A and B pathways ismandatory for the development of early viral hepatitis but not for recovery from viral infection, J VIROLOGY, 75(18), 2001, pp. 8781-8791

Authors: Grosse, P Tintelnot, K Sollner, O Schmitz, B
Citation: P. Grosse et al., Encephalomyelitis due to Cryptococcus neoformans var gattii presenting as spinal tumour: case report and review of the literature, J NE NE PSY, 70(1), 2001, pp. 113-116

Authors: Niehaus, L Hoffmann, KT Grosse, P Roricht, S Meyer, BU
Citation: L. Niehaus et al., MRI study of human brain exposed to dose repetitive magnetic stimulation of visual carter, NEUROLOGY, 54(1), 2000, pp. 256-258

Authors: Ernst, R Grosse, P Philippe, L
Citation: R. Ernst et al., An electromagnetic-thermal coupling example solved on a high frequency inductive system with the Matlab finite elements solver, INT J TH SC, 38(6), 1999, pp. 481-491

Authors: Pons, M Anikin, M Chourou, K Dedulle, JM Madar, R Blanquet, E Pisch, A Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Pons et al., State of the art in the modelling of SiC sublimation growth, MAT SCI E B, 61-2, 1999, pp. 18-28

Authors: Grosse, P Basset, G Calvat, C Couchaud, M Faure, C Ferrand, B Grange, Y Anikin, M Bluet, JM Chourou, K Madar, R
Citation: P. Grosse et al., Influence of reactor cleanness and process conditions on the growth by PVTand the purity of 4H and 6H SiC crystals, MAT SCI E B, 61-2, 1999, pp. 58-62

Authors: Anikin, M Chourou, K Pons, M Bluet, JM Madar, R Grosse, P Faure, C Basset, G Grange, Y
Citation: M. Anikin et al., Influence of growth conditions on the defect formation in SiC ingots, MAT SCI E B, 61-2, 1999, pp. 73-76

Authors: Chourou, K Anikin, M Bluet, JM Dedulle, JM Madar, R Pons, M Blanquet, E Bernard, C Grosse, P Faure, C Basset, G Grange, Y
Citation: K. Chourou et al., Modelling of SiC sublimation growth process: analyses of macrodefects formation, MAT SCI E B, 61-2, 1999, pp. 82-85

Authors: Camassel, J Juillaguet, S Planes, N Raymond, A Grosse, P Basset, G Faure, C Couchaud, M Bluet, JM Chourou, K Anikin, M Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264

Authors: Weis, H Muggenburg, T Grosse, P Herlitze, L Friedrich, I Wuttig, M
Citation: H. Weis et al., Advanced characterization tools for thin films in low-E systems, THIN SOL FI, 351(1-2), 1999, pp. 184-189
Risultati: 1-10 |